Floating Dynamic Access Technology

jiaoxin12366

Abstract--Dual Gate Cell with Double Injected one-transistor dynamic access structure is
proposed. Based on the change of potential, using the floating effect, cell works on the highly
injection efficiency and lowly read-out time. The character of the Dual Gate Cell with Double
Injected is better than the single Injected cell by two-dimensional simulator. The development
history of dynamic access cell based on MOS structure is introduced, which is considered to
decrease the chip areas and to improve the integration level. DRAM cell structure changes
from the original four-transistor structure to three-transistor structure, and to the mature
product structure—one transistor and one capacitor (1T/1C). So far the study has focused on
the one-transistor structure.