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发表于 2013-8-8 10:24:16
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500V
*****************************************************
* Model Generated by STMicroelectronics *
* All Rights Reserved *
* Commercial Use or Resale Restricted *
*****************************************************
* CREATION DATES: 06-09-2006 *
* *
* POWER MOSFET Model (level 3) *
* *
* EXTERNAL PINS DESCRIPTION: *
* *
* PIN 1 -> Drain *
* PIN 2 -> Gate *
* PIN 3 -> Source *
* *
* ****C**** *
* ********************** *
* *************************************** *
* PARAMETER MODELS EXTRACTED FROM MEASURED DATA *
* <<<<<<<<<<<>>>>>>>>>>> *
* *************************************** *
* THIS MODEL CAN BE USED AT TEMPERATURE: 25 蚓 *
* *
*****************************************************
* MODELLING FOR STP8NM50
.SUBCKT STP8NM50 1 2 3
cpx1 9 3 1p
cpx2 12 3 1p
RLG 2 4 7.5n
RLS 12 3 7.5n
RLD 6 1 4.5n
RG 4 5 3.894
RS 9 12 0.341E-02
RD 7 6 0.289
RJ 8 7 0.884E-01
CGS 5 9 0.471E-09
DBS 12 6 DBS_STP8NM50
DBD 9 7 DBD_STP8NM50
MOS 13 5 9 9 MOS_STP8NM50 L=1u W=1u
E3 8 13 POLY(2) 6 8 6 12 0 0 0 0 0.159
* First method to implement dynamic C_GD
* CGD 7 10 0.475E-09
* CK 11 7 0.739E-11
* DGD 11 7 DGD_STP8NM50
* E1 10 5 VCVS 7 5 1 MIN=0
* E2 11 5 VCVS 7 5 1 MAX=0
* Second method to implement dynamic C_GD
G_CDG 7 5 VCCAP PWL(1) 7 5 -1V,475p +1V,74p
.probe tran i(g_cdg)
* Third (original) method to implement dynamic C_GD
* CGD 7 10 0.475E-09
* CK 11 7 0.739E-11
* DGD 11 7 DGD_STP8NM50
* E1 10 5 101 0 1
* E2 11 5 102 0 1
* G1 0 100 7 5 1u
* D1 100 101 DID_STP8NM50
* D2 102 100 DID_STP8NM50
* R1 101 0 1MEG
* R2 102 0 1MEG
.MODEL MOS_STP8NM50 NMOS
+ LEVEL = 3
+ VTO = 4.999
+ PHI = 0.623
+ IS = 0.1P
+ JS = 0
+ THETA = 0.213
+ KP = 2.001
.MODEL DGD_STP8NM50 D
+ IS = 0.1P
+ CJO = 0.191E-10
+ VJ = 0.774
+ M = 0.302
.MODEL DBD_STP8NM50 D
+ IS = 0.1P
+ CJO = 0.393E-12
+ VJ = 0.751
+ M = 0.269
.MODEL DBS_STP8NM50 D
+ IS = 0.1E-12
+ BV = 544
+ N = 1
+ TT = 0.195E-06
+ RS = 0.326E-01
.MODEL DID_STP8NM50 D
+ IS = 2E-12
+ RS = 0
+ BV = 554
.ENDS STP8NM50
* END OF MODELLING
=> BV 554 自己改 700V
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