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发表于 2007-1-26 10:28:41
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About the Author
Dr. Steve C. Cripps obtained his Ph.D. from Cambridge University in 1974.
From 1974 to 1980, he worked for Plessey Research (now GECMM) on
GaAs-FET device and microwave hybrid circuit development. He joined the
solid-state division of Watkins-Johnson (WJ) in Palo Alto, California, in
1981, and since that time has held various engineering and management
positions at WJ, Loral, and Celeritek. His technical activities during that
period focused mainly on broadband solid-state power amplifier design for
ECM applications. He has published several papers on microwave power
amplifier design, including a design methodology that has been widely
adopted in the industry.
Since 1990, Dr. Cripps has been an independent consultant, and his
technical activities have shifted from military to commercial applications,
which include MMIC power amplifer products for wireless communications.
In 1996 he returned to England, where his focus is high-power linearized
power amplifiers for cellular and satellite communications applications,
and the characterization and modeling of high-power RF transistors. |
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