|
|
发表于 2006-12-7 14:32:16
|
显示全部楼层
comment！！！
This is THE book for anyone wanting to understand how MOSFETs work and how to model them. Tsividis presents in clear and simple steps how MOSFETs work, and presents the most physically correct analytic model of MOSFET behavior. This is done in the best prose style I have ever come across in a text or reference book.
Many advanced aspects of MOSFET behavior are covered, especially the operation and modeling of small-signal and high frequency behavior. Short and narrow channel effects are discussed in detail, as is the operation of devices with nonuniformly (vertically) doped channels. There is a substantial treatment of small-signal modeling, both conductance and capacitance (something that tends to get overlooked), that provides the definitive treatment of this topic. Plus a treatment of the transient operation of MOSFETs that is the definitive description. When I first read this (in the 1st. edition, over 10 years ago), it became crystal clear to me how charges and terminal currents should be viewed in MOSFETs under transient operation.
This text is perfect both for teaching and for practicing professionals. The clear and precise descriptions are of most importance for students, and the incredible amount of detailed, useful, and up-to-date information are a goldmine of information for microelectronic engineers. Even seasoned veterans can learn, and have their understanding of MOSFETs improved, by reading this book.
There are many poor (or worse!) MOSFET models that have been published to date. Many of those would not have seen the light of day if their authors had been properly educated by reading this book. This book should, I believe, be required reading for anyone working with MOSFETs, and that pretty much applies to anyone in the microelectronics industry today.
Professor Tsividis brings two key and unique advantages to the understanding of MOSFET behavior. The first is his succint and cogent prose that does not include imprecise and muddy ideas: he definitively points out many of the loose concepts that generally go unquestioned, for example the sacrosanct but equivocal threshold voltage. The second is key to the imprtance of this book: Professor Tsividis is an expert analog designer. Most engineers that work in the field of MOSFET modeling come from a device physics background. They understand at a high level how a MOSFET operates physically. But in practice it is CMOS circuits that are important, therefore the "customer" (design) perspective is what Professor Tsividis brings to the party. (E.g. witness the many problems with modeling output resistance for MOSFETs in many previous models - the "device" oriented modelers did not understand the importance of conductance, as opposed to current, for real circuits). The design expertise and viewpoint is a key differentiator between this and other books.
There have been substantial additions and improvements since the first edition. The "rational" units never were widely accepted, so the 2nd. edition reverts to more usual units (and symbols) that make it easier to read. And of course the advances of the past decade have been incorporated. The number of references in the book is truly staggering.
My only concern is that my copy of the first edition has been well trained over the past decade to fall open at the best pages (of which there are many). I wish that could be transferred to my copies (I already have 2) of the 2nd. edition, but I guess I will have to train them myself.
What a pleasant thought! |
|
/2 
eetop公众号
创芯大讲堂
创芯人才网
