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发表于 2011-6-9 08:57:41
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for Flash Memory Cells - An overview
The aim of this paper is to give a thorough overview of Flash memory cells. Basic operations and charge-injection mechanisms that are most commonly used in actual Flash memory cells are reviewed to provide an understanding of the underlying physics and principles in order to appreciate the large number of device structures, processing technologies, and circuit designs presented in the literature. New cell structures and architechtural solutions have been surveyed ti highlight the evolution of the Flash Memory technology, oriented to both reducing cell size and upgrading product functions. The subject is of extreme interest: new concepts involving new materials, structures, principles or applications are being continuously introduced. The worldwide semiconductor memory market seems ready to accept many new applications in fields that are not specific to traditional nonvolatile memories.
Key words: Charge Carrier process, read-only memory, semiconductor memory. |
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