Terrestrial_Neutron-Induced_Soft_Errors_in_Advanced_Memory_Devices_(2008)

shrbht · 发表于 2010-10-7 16:12:35

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Terrestrial_Neutron-Induced_Soft_Errors_in_Advanced_Memory_Devices_(2008)

Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices. This book covers the relevant up-to-date topics in terrestrial neutron-induced soft errors, and aims to provide succinct knowledge on neutron-induced soft errors to the readers by presenting several valuable and unique features.
Contents: Terrestrial Neutron Spectrometry and Dosimetry; Irradiation Testing in the Terrestrial Field; Neutron Irradiation Test Facilities; Review and Discussion of Experimental Data; Monte Carlo Simulation Methods; Simulation Results and Their Implications; International Standardization of the Neutron Test Method; Summary and Challenges.