ESD Design Papers by prof. Ker Ming-Dou(Part 13)

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ESD Design Papers by prof. Ker Ming-Dou(Part 13)

Ming-Dou Ker (S’92–M’94–SM’97) received the B.S. degree from the Department of Electronics Engineering, and the M.S. and Ph.D. degrees from the Institute of Electronics, National Chiao-Tung University, Hsinchu, Taiwan, R.O.C., in 1986, 1988, and 1993, respectively.
In 1994, he joined the VLSI Design Department of Computer & Communication Research Laboratories (CCL), Industrial Technology Research Institute (ITRI), Taiwan, as a circuit design engineer. In 1998, he had been a Department Manager in the VLSI Design Division of CCL/ITRI. In 2000, he has been an Associate Professor in the Department of Electronics Engineering, National Chiao-Tung University,
Hsinchu, Taiwan. In 2003, he was rotated to the SoC Technology Center , ITRI, as the Director of IP Technology and Design Automation Division. In the field of ESD protection and latch-up in CMOS integrated circuits, he has published over 150 technical papers in some international journals and conferences. Still now, he has held a total of 140 patents on the ESD protection design for integrated circuits,
which including 54 U.S. patents. His inventions on ESD protection design had been widely used in the modern IC products. He had been invited to teach or help ESD protection design by more than one hundred IC design houses or semiconductor companies in the Science-Based Industrial Park, Hsinchu, Taiwan, R.O.C., and in the Silicon Valley, San Jose, CA. He had also received many research awards from ITRI, Dragon Thesis Award (by Acer Foundation), National Science Council, and National Chiao-Tung University. Dr. Ker has also participated
as the member of Technical Program Committee and as Session Chair of many International Conferences. He was elected as the first President of Taiwan ESD Association in 2001.

Contents:
1. A CMOS bandgap reference circuit for sub-1-V operation without using extra low-threshold-voltage device
2. Analysis on the dependence of layout parameters on ESD robustness of CMOS devices for manufacturing in deep-
submicron CMOS process
3. Area-efficient layout design for CMOS output transistors
4. Decreasing-size distributed ESD protection scheme for broadband RF circuits
5. Design and analysis of on-chip ESD protection circuit with very low input capacitance for high-precision analog
applications
6. Design of charge pump circuit with consideration of gate-oxide reliability in low-voltage CMOS processes
7. Design on the low-leakage diode string for using in the power-rail ESD clamp circuits in a 0.35um silicide CMOS
process
8. Design optimization of ESD protection and latchup prevention for a serial IO IC
9. Electrostatic Discharge (ESD) protection for CMOS output buffer in scaled-down CMOS VLSI technology
10. Electrostatic discharge protection design for mixed-voltage CMOS IO buffers
11. ESD failure mechanisms of analog IO cells in a 0.18um CMOS technology
12. ESD implantations for on-chip ESD protection with layout consideration in 0.18um salidided CMOS technology
13. ESD protection design for IO cells with embedded SCR structure as power-rail ESD clamp device in nanoscale
CMOS technology
14. ESD protection design for mixed-voltage IO buffer with substrate-triggered circuit
15. ESD protection design of low-voltage-triggered p-n-p devices and their failure modes in mixed-voltage IO
interfaces with signal levels higher than VDD and lower than VSS
16. ESD protection design on analog pin with very low input capacitance for high-frequency or current-mode
applications
17. ESD protection design to overcome internal damages on interface circuits of a CMOS IC with multiple separated
power pins
18. ESD protection to overcome internal gate-oxide damage on digital-analog interface of mixed-mode CMOS ICs
19. Failure analysis and solutions to overcome latchup failure event of a power controller IC in bulk CMOS
technology
20. Fully process-compatible layout design on bond pad to improve wire bond reliability in CMOS ICs
21. High-current characterization of polysilicon diode for electrostatic discharge protection in sub-quarter-
micron complementary metal oxide semiconductor technology
22. Improved output ESD protection by dynamic gate floating design
23. Investigation of the gate-driven effect and substrate-triggered effect on ESD robustness of CMOS devices
24. Investigation on device characteristics of MOSFET transistor placed under bond pad for high-pin-count SOC
applications
25. Investigation on seal-ring rules for IC product reliability in 0.25-µm CMOS technology
26. Investigation on seal-ring rules for IC product reliability in 0.25um CMOS technology
27. Latchup-free fully-protected input ESD protection circuit for submicron CMOS ICs
28. Layout design to minimize voltage-dependent variation on input capacitance of an analog ESD protection circuit

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