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Products 3D Process Simulator
Thisseries are three dimensional process simulators provided with a 3Dtopography / structure calculation technique and a high-speedcalculation technique.The 3D topography / structure calculation technique and the high-speedcalculation technique are the techniques uniquely developed by TCADInternational for ensuring superior practical usability. This seriesprovide extremely stable functions to calculate three-dimensionaltopography / structure, ion implantation and impurity diffusion.Furthermore, these are provided with various functions such as a pointdefect diffusion model, a stable oxidization calculation, and anextremely precise ion implantation calculation using Monte Carlo modelsupporting supreme 3D simulation technique. In this series, a generalpurpose precise wiring capacitance simulator, and a high speedsimulator for anlyzing optical characteristics of image sensor elementsare also provided.
3D Device Simulator
3Ddevice simulator is provided with a high speed calculation techniqueand a parallel calculation technique that are the techniques uniquelydeveloped by TCAD International. By using it together with our3D-Process Simulator, you can enjoy its eminent performance. Usingdevice topography / structure created by 3D-Process Simulator,topography / structure effect of the device can be analyzed precisely.In Mixed-Mode analysis coupled with a circuit simulator, deviceoperation in an LSI or actual circuit can be analyzed. Analysis oferroneous operation in a circuit level, which is caused by α-rayincidence, is also carried out at a high speed. Particle model, whichuses an acceleration parallel calculation and / or Window-Monte Carlomethod, gives you deep inside of device operation.
Layout Dependent Stress DFM
Variationin transistor characteristics due to stress distribution arises as aconsiderable problem in designing most-advanced devices.TiSSiEN-Atropos is an actually useful DFM (Design ForManufacturability) system that feeds back stress analysis in largescale region and its results to a circuit design stage. TCADInternational's original techniques enable high speed calculation inlarge scale region and have successfully passed in strict tests ofactual application level.
Graphic tool
Weprovide a graphic software that runs on 3D Process / Device Simulator.This tool visually demonstrates one-three dimensional calculationresults in various manners such as cross-sectional views, a graph oflinear distribution, etc including display / non-display setting in therelevant regions.
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eetop公众号
创芯大讲堂
创芯人才网
发表于 2009-10-30 14:21:29
