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In order to clearly introduce the fundamentals, originality and potential of our methodology,
as well as its requirements, the first chapter of this thesis will focus on an elementary case of
study, i.e. the synthesis of the intrinsic MOS common-source gain stage. This nevertheless
practical example will enable a complete illustration of the four main aspects combined in our
approach:
- the opamp synthesis technique based on the transconductance-to-drain current ratio of the
MOS transistor, the so-called gm/ID concept,
- the need for the continuous functional modelling of the analog transistor characteristics
used in our methodology;
- the derivation of a small-signal analytical model of the amplifier performance from a so-
called symbolic analysis;
- the MATLAB implementation of the MOSFET and amplifier functional models, whose
adequacy and potential regarding our purpose will be discussed.
In the second chapter, we will present the different continuous MOS models used in this
work: the charge-sheet and EKV expressions and parameters for both bulk Si and SOI
technologies. An original physical transition linking the two models will be presented. The
modelling and the universality of the transconductance-to-drain current vs normalized current
characteristics will be emphasized and supported by measurements on bulk and SOI
MOSFETs.
Chapter 3 will discuss the limitations of EKV-like models regarding the impact of threshold
voltage and mobility approximations on the MOSFET distorsion performance, simulation and
modelling.
The following chapters will exploit our methodology and model implementations on
MATLAB in order to discuss the optimal design of CMOS operational amplifiers of increasing
complexity. Chapter 4 will focus on the classical second-order opamp architectures: single-stage
and Miller OTAs. Experimental opamp SOI implementations will support the analysis. Chapter
5 will finally address the synthesis of a complex third-order architecture: the gain-boosted
folded-cascode opamp.
Chapter 2 is not included. |
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