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Session 29 Overview
mm-Wave Circuits
Chair: Francesco Svelto, Università di Pavia, Italy
Associate Chair: Piero Andreani, Lund University, Lund, Sweden
Nanoscale silicon ICs prove to be suitable for applications at ever-increasing frequency. In recent years,
building blocks and even complete transceivers operating at mm-wave (24GHz, 60GHz, 77GHz etc.) have
been presented at this conference, and investigations beyond these frequencies are well under way.
Applications are foreseen in the areas of ultra-high-speed wireless communications, security, remote
sensing, medical imaging, and detection of explosives and chemical agents. High-definition mobile interface
(HDMI) for wireless video down-streaming and cable replacement, and automotive radars for active
cruise-control systems are expected to hit the market shortly. IC designers are actively leveraging the
inherent speed of scaled CMOS while overcoming the inevitable problems associated with advanced
processes, such as low breakdown voltage, small intrinsic gain, limited output power capability, and
higher parasitic resistance. Meanwhile, the introduction of architectures such as phased arrays, borrowed
from the military, is expected to improve the sensitivity of receivers and the radiation efficiency of
transmitters. This session presents advances in the design of mm-wave building blocks in silicon technologies,
covering voltage-controlled oscillators, phase-locked loops, amplifiers, and front-ends.
Paper 29.1 [UC Santa Barbara, IBM] shows a 150GHz 8dB-gain amplifier capable of 6.3dBm output power while consuming 25mW
from 1.1V. The chip is realized in 65nm digital CMOS. The session continues with insights into the design of W-band amplifiers,
proposed in paper 29.2 [Helsinki University of Technology]. Operating around 100GHz with a -3dB bandwidth of 21GHz, the amplifier
employs passive components shielded from the substrate and achieves 13dB gain, 7.5dB noise figure, and a saturated output
power of 10.5dBm. Paper 29.3 [UCSD] introduces a new amplifier topology, combining the features of traveling-wave and cascaded
amplifiers. Built in a 0.12μm SiGe BiCMOS process, the amplifier displays an unconditionally stable gain as high as 26dB at
100GHz, with a -3dB bandwidth of 14GHz and a power consumption of 82mW from a 2V supply.
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发表于 2009-3-10 09:19:51
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