leakage current problem in the charge pump and loop filter

joe_chen · 发表于 2009-3-8 21:32:10

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there are three kinds of major leakage currents in advanced CMOS processes:  (a)   tunneling leakage, which relates to the gate   
oxide thickness;
(b) subthreshold leakage
(c) junction diode leakage, which relates to the parasitic pn junctions.

the cross-coupled pair enlarges the output swing in delay cell of vco.

prof3 · 发表于 2009-3-9 01:28:08

Yes, that is why you have to pay attention when designing such a Loop filter in deep-sub micro process. Many design techniques fail and have to modify for it to work under high leakage conditions.

mich_xia · 发表于 2009-12-4 16:04:06

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amodaman · 发表于 2009-12-5 02:28:57

感觉啥都没说啊。

twfly · 发表于 2009-12-26 16:58:36

还以为是文章。。。

waley · 发表于 2009-12-27 03:45:51

wa~~learning
3q

mainhand · 发表于 2010-5-20 23:55:45

Design of High-performance CMOS Charge pumps in Phase-locked loops

dongang · 发表于 2010-7-30 13:01:26

meidongxi

ipmsn5 · 发表于 2010-7-30 15:27:42

两位高人，一个吹，一个扯，
呵呵。

ipmsn5 · 发表于 2010-7-30 15:30:43

小手一抖，5元到手

mich_xia mich_xia 当前离线积分 1600 头像被屏蔽	发表于 2009-12-4 16:04:06 \| 显示全部楼层提示: 作者被禁止或删除内容自动屏蔽
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leakage current problem in the charge pump and loop filter

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