The nal approach is advance device selection. Complementary Metal-Oxide-
Semiconductor (CMOS) has been predominantly used for the past several decades but
there have been studies on other future devices. The limited subthreshold swing in
Metal-Oxide-Semiconductor Field-E ect Transistor (MOSFET) signi cantly restricts
low voltage operation due to a low Ion to Ioff ratio.
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发表于 2008-8-6 17:01:32
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