2007World Scientific-Mosfet Modeling for VlSI Simulation: Theory And Practice

woainio · 发表于 2008-7-17 12:36:44

马上注册，结交更多好友，享用更多功能，让你轻松玩转社区。

您需要登录才可以下载或查看，没有账号？注册

x

[size=120%]Mosfet Modeling for VlSI Simulation: Theory And Practice (International Series on Advances in Solid State Electronics) (International Series on Advances in Solid State Electronics and Technology)
By Narain Arora

登录/注册后可看大图

Publisher: World Scientific Publishing Company
Number Of Pages: 632
Publication Date: 2007-02-14
ISBN-10 / ASIN: 981256862X
ISBN-13 / EAN: 9789812568625
Binding: Hardcover

Product Description:

The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.

[ 本帖最后由 woainio 于 2008-7-17 15:19 编辑 ]

persuadeking · 发表于 2008-7-17 14:45:31

thanks

persuadeking · 发表于 2008-7-17 15:01:18

thanks

persuadeking · 发表于 2008-7-17 15:03:18

thanks

persuadeking · 发表于 2008-7-17 15:05:59

thanks

woainio · 发表于 2008-7-17 15:21:25

persuadeking · 发表于 2008-7-17 15:31:43

thanks

persuadeking · 发表于 2008-7-17 15:34:57

thanks

ferdinands · 发表于 2008-7-17 17:35:08

Design with opamp

ferdinands · 发表于 2008-7-17 17:36:41

强人现身

强人现身:victory: :victory: :victory:

2007World Scientific-Mosfet Modeling for VlSI Simulation: Theory And Practice

马上注册，结交更多好友，享用更多功能，让你轻松玩转社区。

浏览过的版块

站长推荐 /1