MOS器件模型参数提取

suk.qi

Abstract
Smart power integrated circuits (SPICs), which will cause the second technology
revolution, are used more and more widely. The application fields include switching
power supply, electronic ballast, motor drive, mobile electronic, display drive, etc.. In
this paper, the SPIC mentioned here is used to the electronic ballast.
Firstly, the research and development on SPICs are reviewed briefly, form which
we get the aim of this design: the power integrated circuit comprises not only power
devices, but also logic controlled devices.
Secondly, according to the process which is used in this SPIC, the method of
parameter extraction of low-voltage MOSFET is presented, with the help of device
simulation and software AURORA. The extracted model parameters are used in the
SPIC design, and would act as a reference after the process test parameters were get.
Then, a power MOSFET model and the parameter extraction method for it are
introduced, both of them are presented by Prof. Chen. Based on the method, the way
to measure the resistance and the capacitance, both of which vary with the applied
voltage, is discussed. And then it is provided that how to include the
voltage-dependent resistance and capacitance into the device model library for
schematic simulation.
In appendix, several examples of shell program associated with software MEDICI
in UNIX operation system are introduced. Device simulation and data processing may
be more efficient with the help of shell program.

iyahsue

GOOOOOOOOOOOOOOOOOD

suk.qi018

这方面的资源比较多，我就多发些过来。

liuzhieetop

iii

有下有推喔

appleton

赞！感谢楼主！

fanjx

收留备用

suk.qi

其实这些文章是大学同学的硕士论文，我个人有这种资源，就提供给大家参考。有的教育网也是可以下载下来的。

147107186s

好东西啊！

jcchan

很好的資料，感謝大大無私的分享。