BSIM43 manual

yohuang

Chapter 1: Effective Oxide Thickness, Channel Length and Channel Width
Chapter 2: Threshold Voltage Model
Chapter 3: Channel Charge and Subthreshold Swing Models
Chapter 4: Gate Direct Tunneling Current Model
Chapter 5: Drain Current Model
Chapter 6: Body Current Models
Chapter 7: Capacitance Model
Chapter 8: High-Speed/RF Models
Chapter 9: Noise Modeling
Chapter 10: Asymmetric MOS Junction Diode Models
Chapter 11: Layout-Dependent Parasitics Model
Chapter 12: Temperature Dependence Model
Chapter 13: Stress Effect Model
Chapter 14: Parameter Extraction Methodology
Appendix A: Complete Parameter List
Appendix B: Core Parameter List for General Parameter
Appendix C: References C-1