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楼主 |
发表于 2012-3-22 12:24:07
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phdseeker 发表于 2012-3-22 06:56
大哥实在是太感谢了。
昨天我还发了两篇文章的求助帖,你可能没有看到。我再把文章贴在这里。你看看能否帮我下载到,多谢了!
"Studies of EOS susceptibility in 0.6 μm nMOS ESD I/O protection structures "
- Carlos H. Díaz, a,
- Charvaka Duvvuryb,
- Sung-Mo Kangc
- a Integrated Circuits Business Division, Technology Development Center, Hewletr-Packard Co., 3500 Deer Creek Road, MS26-U8, Palo Alto, CA 94303-0867, USA
- b Texas Instruments Incorporated, Semiconductor Process Design Center, M/S 461, P.O. Box 655012, Dallas, TX 75265, USA
- c University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, 1308 West Main Street, Urbana, IL 61801, USA
- Received 29 October 1993. Accepted 13 April 1994. Available online 12 February 2003.
http://www.sciencedirect.com/science/article/pii/0304388694900353
"Electrical Overstress Power Profiles: A Guideline to Qualify EOS Hardness of Semiconductor Devices"
- Carlos Díaza,
- Sung-Mo Kanga
- a University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, 1308 West Main Street, Urbana, IL 61801, USA
- Charvaka Duvvuryb,
- Larry Wagnerb
- b Texas Instruments Incorporated, M/S 461, P.O. Box 655012, Dallas, TX 75265, USA
- Received 13 October 1992. Accepted 6 April 1993. Available online 12 February 2003
http://www.sciencedirect.com/science/article/pii/030438869390007T |
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