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这是BSIM4系列最新的用户手册——BSIM4v4.8.0 MOSFET Model User Manual
BSIM4主要是针对0.13 um, 90 nm, 65 nm, 45/40 nm, 23/28 nm, 22/20nm的工艺节点
以下是对BSIM4的英文介绍：
BSIM4, as the extension of BSIM3 model, addresses the MOSFET physical effects into sub-100nm regime. It is a physics-based, accurate, scalable, robustic and predictive MOSFET SPICE model for circuit simulation and CMOS technology development. It is developed by the BSIM Research Group in the Department of Electrical Engineering and Computer Sciences (EECS) at the University of California, Berkeley. All suggestions for model improvements are charted by the Compact Model Coalition (CMC).
BSIM4 has been used for the 0.13 um, 90 nm, 65 nm, 45/40 nm, 23/28 nm, and 22/20nm technology nodes.
欢迎各位下载
BSIM4v480 MOSFET Model User Manual .pdf
(2.17 MB, 下载次数: 648 )
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发表于 2016-11-22 23:17:44
