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Low-Power Low-Voltage Sigma-Delta Modulators in Nanometer CMOS

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发表于 2008-3-3 20:34:37 | 显示全部楼层 |阅读模式

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Low-Power Low-Voltage Sigma-Delta Modulators in Nanometer CMOS

Low-Power Low-Voltage Sigma-Delta Modulators in Nanometer CMOSaddresses the low-power low-voltage Sigma-Delta ADC design in nanometerCMOS technologies at both the circuit-level and the system level.
The low-power low-voltage Sigma-Delta modulator design at thecircuit level is introduced. A design example is presented in thisbook. This design is the first published Sigma-Delta design in a 90-nmCMOS technology and reaches a very high figure-of-merit.
At the system level, a novel systematic study on the fullfeedforward Sigma-Delta topology is presented in this book. As a designexample, a fourth-order single-loop full feedforward Sigma-Deltamodulator design in a 130-nm pure digital CMOS technology is presented.This design is the first design using the full feedforward Sigma-Deltatopology and reaches the highest conversion speed among all the 1-VSigma-Delta modulators to date.
LOW-POWER LOW-VOLTAGE SIGMA-DELTA MODULATORS IN NANOMETER CMOS.jpg

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发表于 2008-3-4 11:28:15 | 显示全部楼层
Recent research work on the low-power low-voltage - ADC design in nanometer
CMOS technologies has been presented in this book. In a low-power low-voltage -
 ADC design in nanometer CMOS technologies, both approaches at the circuit level
and at the system level are presented. Several presented designs have demonstrated that
it is possible to implement high performance ADCs in nanometer CMOS technologies.
In Chapter 2 the scaling-down of the CMOS technology is introduced. Then the impact
of the CMOS scaling-down to analog circuits is described. For the analog circuit,
the CMOS scaling-down brings us not only faster transistors, but also many design
challenges. The impact of the CMOS scaling-down to the ADC design is then analyzed
in its different aspects.
发表于 2008-3-4 11:29:47 | 显示全部楼层
by
Libin Yao
Katholieke Universiteit Leuven,
Leuven, Belgium
Michiel Steyaert
Katholieke Universiteit Leuven
Leuven, Belgium
and
Willy Sansen
Katholieke Universiteit Leuven,
Leuven, Belgium
发表于 2008-3-4 11:30:52 | 显示全部楼层
This work is devoted to exploration of low-power low-voltage - ADC design in
nanometer CMOS technologies. The outline of the work is as follows:
Chapter 2 presents the evolution of the CMOS technologies and its impact to the analog
circuit design, and more specifically, to the ADC design. Different design difficulties
are addressed and potential solutions are suggested in this chapter.
Chapter 3 presents the basic principle of the ADC. Then the operation principle of the
- ADC is introduced. The traditional single-loop and the cascaded - ADC are
introduced. Optimized loop coefficients of the traditional single-loop and the cascaded
- ADC are presented as well.
发表于 2008-3-4 11:32:35 | 显示全部楼层
Chapter 4 presents the circuit level approach of the low-power low-voltage - ADC
design in nanometer CMOS technologies. The low-voltage low-power OTA design is
introduced firstly. A gain-enhanced current mirror OTA with high power-efficiency
is described. It is meaningful to explore the possibility of implementing high performance
- modulators in a standard digital process in nanometer technologies. In this
chapter, a single-loop third-order switched-capacitor - modulator implemented in a
standard digital 90-nm CMOS technology is demonstrated. Finally extensive measurements
on the power-supply-rejection-ratio and the low-frequency noise are performed
and the measurement results are interpreted.
Chapter 5 presents the system level approach of the low-power low-voltage - ADC
design in nanometer CMOS technologies. Circuit level problems can often easily be
solved at the system level. In the first section of this chapter, the full feedforward -
 ADC is introduced. The features associated with this topology are analyzed. Optimized
loop coefficients for different full feedforward - ADCs obtained from
the behavioral simulation are presented in this chapter. By introducing the novel full
feedforward - modulator topology, several drawbacks of the traditional- modulators
are overcome. Then the linearity of the full feedforward - modulator is
analyzed. The circuit implementation of the full feedforward - modulator is introduced.
Two design examples in a 180-nm and a 130-nm CMOS technologies are
presented. Comparisons to the state-of-the-art works are also provided to more clearly
evaluate the proposed design. Finally, a multibit full feedforward - modulator design
is proposed.
Finally some general conclusions are drawn in the last chapter.
发表于 2008-3-4 14:23:11 | 显示全部楼层
thx a lot
nice book
I need it
发表于 2008-3-4 14:28:12 | 显示全部楼层
thx a lot
good
发表于 2008-3-4 14:30:45 | 显示全部楼层
thx a lot
发表于 2008-3-4 14:41:33 | 显示全部楼层
Ding!!
thx for sharing
发表于 2008-3-4 14:45:08 | 显示全部楼层
thx a lot
good
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