Deep submicron CMOS VLSI reliability modeling, simulation design国外博士论文

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发篇可靠性仿真的博士论文！

[ 本帖最后由 飞雪 于 2007-5-29 16:18 编辑 ]

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ABSTRACT：
CMOS VLSI circuit reliability modeling and simulation have attracted intense
research interest in the last two decades, and as a result almost all IC Design For
Reliability (DFR) tools now try to incrementally simulate device wearout mecha-
nisms in iterative ways. These DFR tools are capable of accurately characterizing
the device wearout process and predicting its impact on circuit performance. Never-
theless, excessive simulation time and tedious parameter testing process often limit
popularity of these tools in product design and fabrication.
This work develops a new SPICE reliability simulation method that shifts the
focus of reliability analysis from device wearout to circuit functionality. A set of
accelerated lifetime models and failure equivalent circuit models are proposed for
the most common MOSFET intrinsic wearout mechanisms, including Hot Carrier
Injection (HCI), Time Dependent Dielectric Breakdown (TDDB), and Negative Bias
Temperature Instability (NBTI). The accelerated lifetime models help to identify
the most degraded transistors in a circuit in terms of the device's terminal voltage
and current waveforms. Then corresponding failure equivalent circuit models are in-
corporated into the circuit to substitute these identi¯ed transistors. Finally, SPICE
simulation is performed again to check circuit functionality and analyze the impact
of device wearout on circuit operation. Device wearout e®ects are lumped into a
very limited number of failure equivalent circuit model parameters, and circuit per-
formance degradation and functionality are determined by the magnitude of these
parameters.
In this new method, it is unnecessary to perform a large number of small-step
SPICE simulation iterations. Therefore, simulation time is obviously shortened in
comparison to other tools. In addition, a reduced set of failure equivalent circuit
model parameters, rather than a large number of device SPICE model parameters,
need to be accurately characterized at each interim wearout process. Thus device
testing and parameter extraction work are also signi¯cantly simpli¯ed. These ad-
vantages will allow circuit designers to perform quick and e±cient circuit reliability
analyses and to develop practical guidelines for reliable electronic designs.

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CONTENT：
1 Introduction 1
1.1 CMOS Scaling and New Reliability Challenges . . . . . . . . . . . . . 1
1.2 Purpose of the Dissertation . . . . . . . . . . . . . . . . . . . . . . . 4
1.3 Dissertation Organization and Chapter Overviews . . . . . . . . . . . 4
2 Simulation Models and Algorithms 10
2.1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2.2 Review of Reliability Simulation Tools . . . . . . . . . . . . . . . . . 12
2.2.1 Reliability Simulation in Virtuoso UltraSim . . . . . . . . . . 12
2.2.2 Reliability Simulation in Eldo . . . . . . . . . . . . . . . . . . 14
2.3 Limitations and Improvements . . . . . . . . . . . . . . . . . . . . . . 17
2.4 Assumptions and Justi¯cation . . . . . . . . . . . . . . . . . . . . . . 22
2.5 Summary of Lifetime and Circuit Models . . . . . . . . . . . . . . . . 24
2.5.1 Hot Carrier Injection . . . . . . . . . . . . . . . . . . . . . . . 25
2.5.2 Time Dependent Dielectric Breakdown . . . . . . . . . . . . . 25
2.5.3 Negative Bias Temperature Instability . . . . . . . . . . . . . 27
2.6 Reliability Prediction and Simulation Algorithms . . . . . . . . . . . 29
2.6.1 Circuit Lifetime and Failure Rate Prediction . . . . . . . . . . 29
2.6.2 Circuit Reliability Simulation Algorithm . . . . . . . . . . . . 33
3 Hot Carrier Injection E®ect and Models 36
3.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.2 Accelerated Lifetime Model . . . . . . . . . . . . . . . . . . . . . . . 37
3.3 Failure Equivalent Circuit Model . . . . . . . . . . . . . . . . . . . . 43
3.4 Implementation in MaCRO . . . . . . . . . . . . . . . . . . . . . . . 52
3.5 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
4 Time Dependent Dielectric Breakdown E®ect and Models 54
4.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
4.2 Accelerated Lifetime Model . . . . . . . . . . . . . . . . . . . . . . . 55
4.3 Failure Equivalent Circuit Model . . . . . . . . . . . . . . . . . . . . 62
4.4 Implementation in MaCRO . . . . . . . . . . . . . . . . . . . . . . . 76
4.5 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
5 Negative Bias Temperature Instability E®ect and Models 80
5.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
5.2 Accelerated Lifetime Model . . . . . . . . . . . . . . . . . . . . . . . 81
5.3 Failure Equivalent Circuit Model . . . . . . . . . . . . . . . . . . . . 90
5.4 Implementation in MaCRO . . . . . . . . . . . . . . . . . . . . . . . 94
5.5 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
6 Electromigration Lifetime Models and Parameter Extraction 98
6.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
6.2 Electromigration Failure Physics . . . . . . . . . . . . . . . . . . . . . 99
6.2.1 Nucleation-Dominated Failure Physics . . . . . . . . . . . . . 100
6.2.2 Growth-Dominated Failure Physics . . . . . . . . . . . . . . . 100
6.3 Electromigration Lifetime Models . . . . . . . . . . . . . . . . . . . . 101
6.4 Model Parameter Extraction . . . . . . . . . . . . . . . . . . . . . . . 102
6.4.1 Current Density . . . . . . . . . . . . . . . . . . . . . . . . . . 103
6.4.2 Current Acceleration Factor and Activation Energy . . . . . . 105
6.4.3 Temperature E®ects . . . . . . . . . . . . . . . . . . . . . . . 108
6.4.4 Example of Typical Values . . . . . . . . . . . . . . . . . . . . 110
6.5 Electromigration of Copper Wires . . . . . . . . . . . . . . . . . . . . 110
7 Derating Voltage and Temperature for Reliability 112
7.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
7.2 Circuit Design and Simulation . . . . . . . . . . . . . . . . . . . . . . 114
7.3 Simulation Results and Analysis . . . . . . . . . . . . . . . . . . . . . 115
7.3.1 Voltage Derating Analysis . . . . . . . . . . . . . . . . . . . . 115
7.3.2 Temperature Derating Analysis . . . . . . . . . . . . . . . . . 118
7.3.3 Voltage Transfer Analysis . . . . . . . . . . . . . . . . . . . . 122
7.4 Derating Model and Derating Factor . . . . . . . . . . . . . . . . . . 125
7.5 Derating Factor and Simulation . . . . . . . . . . . . . . . . . . . . . 128
7.6 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
8 SRAM Reliability Simulation and Analysis 132
8.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
8.2 SRAM Circuit Design and Simulation . . . . . . . . . . . . . . . . . . 133
8.3 Preview of SRAM Failure Behaviors . . . . . . . . . . . . . . . . . . . 138
8.4 Device Lifetime Calculation . . . . . . . . . . . . . . . . . . . . . . . 141
8.5 SPICE Reliability Simulation with Circuit Models . . . . . . . . . . . 145
8.5.1 HCI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
8.5.2 HCI+TDDB . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
8.5.3 HCI+TDDB+NBTI . . . . . . . . . . . . . . . . . . . . . . . 152
8.6 Reliability Design Techniques . . . . . . . . . . . . . . . . . . . . . . 157
8.7 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158
9 Summary 159
9.1 Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159
9.2 Main Contributions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162
9.3 Future Work . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163
A MATLAB Programs for Circuit Model Calculation 165
A.1 Hot Carrier Injection . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
A.2 Time Dependent Dielectric Breakdown . . . . . . . . . . . . . . . . . 166
A.3 Negative Bias Temperature Instability . . . . . . . . . . . . . . . . . 168

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semico_ljj

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for2007

many Thanks!

meidinlei

thanks