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PHYSICS OF SEMICONDUCTOR DEVICE.2002.Edit.

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发表于 2009-2-28 14:59:04 | 显示全部楼层 |阅读模式

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by
J. P. Colinge
Department of Electrical and Computer Engineering
University of California, Davis
C. A. Colinge
Department of Electrical and Electronic Engineering
California State University

Press
KLUWER ACADEMIC PUBLISHERS
NEW YORK, BOSTON, DORDRECHT, LONDON, MOSCOW

Contents
Preface
1.Energy Band Theory
Electron in a crystal
Two examples of electron behavior
Free electron
The particle-in-a-box approach
Energy bands of a crystal (intuitive approach)
Krönig-Penney model
Valence band and conduction band
Parabolic band approximation
Concept of a hole
Effective mass of the electron in a crystal
Density of states in energy bands
Intrinsic semiconductor
Extrinsic semiconductor
Ionization of impurity atoms
Electron-hole equilibrium
Calculation of the Fermi Level
Degenerate semiconductor
Alignment of Fermi levels
Important Equations
Problems
2. Theory of Electrical Conduction
Drift of electrons in an electric field
Mobility
Drift current
Hall effect
Diffusion current
Drift-diffusion equations
Einstein relationships
Transport equations
Quasi-Fermi levels
Important Equations
Problems

[ 本帖最后由 xhwubai 于 2009-2-28 15:17 编辑 ]

GOOD-PHYSICS OF SEMICONDUCTOR DEVICE.2002.Edit.part1.rar

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 楼主| 发表于 2009-2-28 15:16:00 | 显示全部楼层
3.Generation/Recombination Phenomena
Introduction
Direct and indirect transitions
Generation/recombination centers
Excess carrier lifetime
SRH recombination
Minority carrier lifetime
Surface recombination
Important Equations
Problems
4.The PN Junction Diode
Introduction
Unbiased PN junction
Biased PN junction
Current-voltage characteristics
Derivation of the ideal diode model
Generation/recombination current
Junction breakdown
Short-base diode
PN junction capacitance
Transition capacitance
Diffusion capacitance
Charge storage and switching time
Models for the PN junction
Quasi-static, large-signal model
Small-signal, low-frequency model
Small-signal, high-frequency model
Solar cell
PiN diode
Important Equations
Problems
5.Metal-semiconductor contacts
Schottky diode
Energy band diagram
Extension of the depletion region
Schottky effect
Current-voltage characteristics
Influence of interface states
Comparison with the PN junction
Ohmic contact
Important Equations
Problems

[ 本帖最后由 xhwubai 于 2009-2-28 15:19 编辑 ]

GOOD-PHYSICS OF SEMICONDUCTOR DEVICE.2002.Edit.part2.rar

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 楼主| 发表于 2009-2-28 15:25:04 | 显示全部楼层
6.JFET and MESFET
The JFET
The MESFET
Important Equations
The MOS Transistor
Introduction and basic principles
7.The MOS capacitor
Accumulation
Depletion
Inversion
Threshold voltage
Ideal threshold voltage
Flat-band voltage
Threshold voltage
Current in the MOS transistor
Influence of substrate bias on threshold voltage
Simplified model
Surface mobility
Carrier velocity saturation
Subthreshold current - Subthreshold slope
Continuous model
Channel length modulation
Numerical modeling of the MOS transistor
Short-channel effect
Hot-carrier degradation
Scaling rules
Hot electrons
Substrate current
Gate current
Degradation mechanism
Terminal capacitances
Particular MOSFET structures
Non-Volatile Memory MOSFETs
SOI MOSFETs
Advanced MOSFET concepts
Polysilicon depletion
High-k dielectrics
Drain-induced barrier lowering (DIBL)
Gate-induced drain leakage (GIDL)
Reverse short-channel effect
Quantization effects in the inversion channel
Important Equations
Problems

GOOD-PHYSICS OF SEMICONDUCTOR DEVICE.2002.Edit.part3.rar

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 楼主| 发表于 2009-2-28 15:36:17 | 显示全部楼层
8.The Bipolar Transistor
Introduction and basic principles
Long-base device
Short-base device
Fabrication process
Amplification using a bipolar transistor
Ebers-Moll model
Emitter efficiency
Transport factor in the base
Regimes of operation
Transport model
Gummel-Poon model
Current gain
Recombination in the base
Emitter efficiency and current gain
Early effect
Dependence of current gain on collector current
Recombination at the emitter-base junction
Kirk effect
Base resistance
Numerical simulation of the bipolar transistor
Collector junction breakdown
Common-base configuration
Common-emitter configuration
Charge-control model
Forward active mode
Large-signal model
Small-signal model
Important Equations
Problems
9.Heterojunction Devices
Concept of a heterojunction
Energy band diagram
Heterojunction bipolar transistor (HBT)
High electron mobility transistor (HEMT)
Photonic Devices
Light-emitting diode (LED)
Laser diode
Problems

GOOD-PHYSICS OF SEMICONDUCTOR DEVICE.2002.Edit.part4.rar

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 楼主| 发表于 2009-2-28 16:02:01 | 显示全部楼层
10.Quantum-Effect Devices
Tunnel Diode
Tunnel effect
Tunnel diode
Low-dimensional devices
Energy bands
Density of states
Conductance of a 1D semiconductor sample
2D and 1D MOS transistors
Single-electron transistor
Tunnel junction
Double tunnel junction
Single-electron transistor
Problems
11.Semiconductor Processing
Semiconductor materials
Silicon crystal growth and refining
Doping techniques
Ion implantation
Doping impurity diffusion
Gas-phase diffusion
Oxidation
Chemical vapor deposition (CVD)
Silicon deposition and epitaxy
Dielectric layer deposition
Photolithography
Etching
Metallization
Metal deposition
Metal silicides
CMOS process
NPN bipolar process
Problems
12.Annex
Physical Quantities and Units
Physical Constants
Concepts of Quantum Mechanics
Crystallography – Reciprocal Space
Getting Started with Matlab
Greek alphabet
Basic Differential Equations
Index

GOOD-PHYSICS OF SEMICONDUCTOR DEVICE.2002.Edit.part5.rar

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发表于 2009-3-1 20:29:27 | 显示全部楼层
xiaxia ni!
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发表于 2009-6-9 21:17:52 | 显示全部楼层
谢谢,好不容易找到
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发表于 2009-6-13 13:00:43 | 显示全部楼层
先下载了!
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发表于 2009-6-13 13:02:20 | 显示全部楼层
加油!
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发表于 2009-6-13 13:03:51 | 显示全部楼层
继续!
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