[Takayasu Sakurai]Fully-Depleted SOI CMOS Circuits and Technology

steady · 发表于 2009-1-16 09:18:54

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比较新的一本涉及基于SOI的设计电路的书，日本人写的，springer出版
PREFACE
The most important issue confronting CMOS technology is the power explosion of chips arising from the scaling law. Bulk- Si devices are now running into a number of fundamental physical limits, and SOI technology provides a promising low- power solution to chip implementation. Research and development on SOI technology have been accelerating rapidly since 1998, when IBM announced that they would use partially- depleted (PD) SOI technology to make the PowerPC MPU. Motorola and AMD have also produced a number of MPUs made with SOI devices. Recently, Sony, Toshiba, and IBM announced that they would employ SOI devices for the nextgeneration broadband engine: the CELL processor. The next generation of SOI technology employs fully- depleted (FD) devices. According to the ITRS roadmap, FD- SOI technology will be necessary to preserve the scaling law. It has the additional advantage of ultralow-power
operation, with the power consumption being less than 10 mW. Ultralowpower VLSIs are attracting a great deal of attention because they will be key components of network computing and services in the coming ubiquitous- IT society. The visible manifestation of this trend is the increasing number of mobile phones, electronic dictionaries, game sets, and personal digital assistants, for which it is imperative to reduce the power consumption as much as possible to prolong battery life. Oki Electric began producing a microcontroller and an RF chip made with FD- SOI devices for use in ultralow-power radio-controlled watches. As the demand for smaller, more power-efficient devices grows, FD- SOI technology will become increasingly important. Technical books on circuit design methods for PD- SOI devices in applications such as ultrahigh- speed microprocessors have been published; but no books have yet appeared that systematically cover design methods for FD-SOI devices in ultralow- power applications. This book covers topics ranging from the minimum required knowledge of the fabrication of SOI substrates and FD-SOI devices to the latest developments in device and process technologies, ultralowvoltage circuits such as digital circuits, analog/RF circuits, and DC-DC converters. Each technique is fully explained using figures. Furthermore, the book gives three examples of ultralow- power applications based on FD-SOI technology, providing every reader with practical knowledge on the technology and the circuits.
We hope that this book will further the understanding of FD- SOI technology and ultralow- voltage circuit techniques for FD- SOI devices.

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