silvaco硅的击穿特性仿真

1234598

求问，仿硅的击穿特性，但是一到击穿电压就不收敛，应该怎么办呀
go atlas

mesh

y.m l=0 s=0.05
y.m l=0.25 s=0.005
y.m l=0.35 s=0.005
y.m l=1 s=0.005
y.m l=4 s=0.05

x.m l=0 s=0.05
x.m l=1 s=0.05

region num=1 material=silicon

elec  name=anode top
elec  name=cathode bottom

doping uniform p.type conc=1e19 y.min=0 y.max=0.25 x.min=0 x.max=1
doping uniform n.type conc=1e16 y.min=0.25 y.max=4 x.min=0 x.max=1

models bgn   bbt.std bbt.kl
impact selb
output e.field e.lines e.velocity e.mobility band.param con.band val.band charge devdeg qfn qfp qss recomb taurn  taurp traps tot.doping j.conduc impact
method newton  maxtraps=10
solve init
log outf=si-dio-VB.log
solve vcathode=0
solve vcathode=0.1
solve vcathode=0.3
solve vcathode=0.6
solve vcathode=1
solve vcathode=2 vstep=1 vfinal=50 name=cathode
solve vcathode=50 vstep=0.1 vfinal=55 name=cathode
solve vcathode=55 vstep=1 vfinal=100 name=cathode

save outf=si-dio-VB.str
tonyplot si-dio-VB.log si-dio-VB.str


quit

1234598

用curvetrace也是提示error：收敛问题

go atlas

mesh

y.m l=0 s=0.05
y.m l=0.25 s=0.005
y.m l=0.35 s=0.005
y.m l=1 s=0.005
y.m l=4 s=0.05

x.m l=0 s=0.05
x.m l=1 s=0.05

region num=1 material=silicon

elec  name=anode top
elec  name=cathode bottom

doping uniform p.type conc=1e19 y.min=0 y.max=0.25 x.min=0 x.max=1
doping uniform n.type conc=1e16 y.min=0.25 y.max=4 x.min=0 x.max=1

models srh conmob bgn auger fldmob   bbt.std bbt.kl
impact selb
output e.field e.lines e.velocity e.mobility band.param con.band val.band charge devdeg qfn qfp qss recomb taurn  taurp traps tot.doping j.conduc impact
method  newton  climit=1.e-4

curvetrace end.val=1e-4 contr.name=cathode curr.cont mincur=1e-13 nextst.ratio=1.2
log outf=si-dio-VB.log
solve curvetrace


save outf=si-dio-VB.str
tonyplot si-dio-VB.log si-dio-VB.str

fd_alanYang