在线咨询
eetop公众号 创芯大讲堂 创芯人才网
切换到宽版

EETOP 创芯网论坛 (原名:电子顶级开发网)

手机号码,快捷登录

手机号码,快捷登录

找回密码

  登录   注册  

快捷导航
搜帖子
查看: 646|回复: 5

[转贴] advance semi EE290d and finfet course

[复制链接]
发表于 2024-3-6 06:28:27 | 显示全部楼层 |阅读模式

马上注册,结交更多好友,享用更多功能,让你轻松玩转社区。

您需要 登录 才可以下载或查看,没有账号?注册

x
https://inst.eecs.berkeley.edu/~ee290d/fa13/


https://inst.eecs.berkeley.edu// ... D_LectureNotes.html

Module  I: Device Physics
  
Lecture 1: course overview, history of  multiple-gate MOSFET development marked  version
  Lecture 2: MOSFET performance  metrics, short-channel MOSFET electrostatics, scale length marked version (
updated on 9/11)
  Lecture 3: advantages of thin-body  MOSFETs in electrostatics, Effective drive current marked version
  
Lecture 4: semiconductor band structure,  quantum confinement effect, low-field effective mobility, high-field velocity  saturation marked version
  
Lecture 5:  thin-body MOSFETs quantum confinement and carrier mobility, series  resistance, apparent mobility, ballistic transport marked version
  
Lecture 6: MOSFET compact  modeling, Technology CAD
    

  
Module  II: Device-Process Interactions
  Lecture 7: impacts of substrate, bulk  vs. SOI FinFETs,  Fin patterning, gate stack engineering marked version
  
                  Introduction  to double patterning approaches (Wikipedia)
  Lecture 8: FinFET  Source/Drain doping, thin-body MOSFET’s threshold voltage engineering marked version
  Lecture 9: Strained-Si technology I:  device physics: band structure and scattering rates vs. strain marked  version
  
Lecture 10:  Strained-Si technology II: process implementation of stressors: eSiGe, SMT, CESL, Gate-Last on Planar and FinFETs
  
Lecture 11:  process-induced performance variability I: Random marked version (updated on 11/5)
  
Lecture 12:  process-induced performance variability II: Systematic marked version
  

  
Module  III: Device-Circuit Interactions
  Lecture 13: digital device’s  metrics, energy vs. delay plots,  technology advancement on logic circuits
  Lecture 14: SRAM technology &  designs, scaling trend, FinFET-based SRAM issues,  SRAM alternatives
  Lecture 15: MPU technology trends, state-of-the-art  CMOS platforms: planar MOSFETs and FinFETs
  
Lecture 16: MOSFET  analog/RF performance metrics, bulk and thin-body MOSFET’s Analog/RF  performance
  
Lecture 17: back-end-of-line  (BEOL) technology, system-level integrations: SiP,  TSV and Monolithic 3D
  Lecture 18: multiple-floating gate devices, 3-D vertical  NAND

发表于 2024-3-8 10:30:46 | 显示全部楼层
感谢
发表于 2024-3-13 14:40:18 | 显示全部楼层
多谢分享。。
发表于 2024-5-19 17:59:32 | 显示全部楼层
Thanks
发表于 2024-7-2 16:56:14 | 显示全部楼层
the link is not good any more
发表于 2024-7-2 21:39:36 | 显示全部楼层
Thanks
您需要登录后才可以回帖 登录 | 注册

本版积分规则

关闭

站长推荐 上一条 /2 下一条

小黑屋| 手机版| 关于我们| 联系我们| 在线咨询| 隐私声明| EETOP 创芯网
( 京ICP备:10050787号 京公网安备:11010502037710 )

GMT+8, 2024-9-22 01:25 , Processed in 0.024157 second(s), 7 queries , Gzip On, Redis On.

eetop公众号 创芯大讲堂 创芯人才网
快速回复 返回顶部 返回列表