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https://inst.eecs.berkeley.edu/~ee290d/fa13/
https://inst.eecs.berkeley.edu// ... D_LectureNotes.html
Module I: Device Physics
Lecture 1: course overview, history of multiple-gate MOSFET development marked version
Lecture 2: MOSFET performance metrics, short-channel MOSFET electrostatics, scale length marked version (updated on 9/11)
Lecture 3: advantages of thin-body MOSFETs in electrostatics, Effective drive current marked version Lecture 4: semiconductor band structure, quantum confinement effect, low-field effective mobility, high-field velocity saturation marked version Lecture 5: thin-body MOSFETs quantum confinement and carrier mobility, series resistance, apparent mobility, ballistic transport marked version Lecture 6: MOSFET compact modeling, Technology CAD
Module II: Device-Process Interactions
Lecture 7: impacts of substrate, bulk vs. SOI FinFETs, Fin patterning, gate stack engineering marked version Lecture 10: Strained-Si technology II: process implementation of stressors: eSiGe, SMT, CESL, Gate-Last on Planar and FinFETs
Module III: Device-Circuit Interactions
Lecture 13: digital device’s metrics, energy vs. delay plots, technology advancement on logic circuits
Lecture 14: SRAM technology & designs, scaling trend, FinFET-based SRAM issues, SRAM alternatives
Lecture 15: MPU technology trends, state-of-the-art CMOS platforms: planar MOSFETs and FinFETs Lecture 16: MOSFET analog/RF performance metrics, bulk and thin-body MOSFET’s Analog/RF performance Lecture 17: back-end-of-line (BEOL) technology, system-level integrations: SiP, TSV and Monolithic 3D Lecture 18: multiple-floating gate devices, 3-D vertical NAND
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