1、A Low-Noise Area-Efficient Column-Parallel ADC With an Input Triplet for a 120-dB High Dynamic Range CMOS Image Sensor
doi:https://doi.org/10.1109/TVLSI.2023.3323363 2、A 12.5-ppm/°C 1.086-nW/kHz Relaxation Oscillator with Clock-Gated Discrete-Time Comparator in 22nm CMOS Technology
doi:https://doi.org/10.1109/ESSCIRC59616.2023.10268752 3、A 0-to-35mA NMOS Capacitor-Less LDO with Dual-Loop Regulation Achieving 3ns Response Time and 1pF-to-10nF Loading Range
doi:https://doi.org/10.1109/ESSCIRC59616.2023.10268699 4、A 1.9μVrms 7.7ppm/°C ADC Reference with 20mA Output Current and Single-Trim Inaccuracy of ±0.03%(3σ) from -40°C to 125°C
doi:https://doi.org/10.1109/ESSCIRC59616.2023.10268754 5、An 18.2μW 101.1dB DR Fully-Dynamic ΔΣ ADC with Partially-Feedback Noise-Shaping Quantizer and CLS-Embedded Two-Stage FIAs
doi:https://doi.org/10.1109/ESSCIRC59616.2023.10268800 6、A linearity improvement method for CIS column-parallel SAR ADC using two-step conversion
doi:https://doi.org/10.1109/ESSCIRC59616.2023.10268814