Traditionally operating a MOS transistor in strong inversion region is the analog designers choice in their design space[1, 2]. Transconductance of a MOS transistor is
. We have three degrees of freedom. EKV Model is a physical model, was proposed by Enz, Krummenacher, and Vittoz from EPFL. The channel current in weak inversion region is given by (1)
where,
and
n is subthreshold slope factor (~ 1.5 in 180nm CMOS tech). Trans-conductance in weak inversion region is (2)
(3)
gm/id methodology is used to size transistors, particularly in short channel devices or deep sub-micron technologies.
The following data is generated over a reasonable range of
and channel lengths
Generate data for the following over a reasonable range of gm/ID and channel lengths - Transit frequency (fT)
- Intrinsic gain (gm/gds)
- Current density (ID/W)
These parameters are (to first order) independent of transistor width, which enables “normalized design”. In a MOS transistor as
increases,
generation efficiency decreases.
is maximum in weak inversion, and almost constant over a large range in this region.
gmid1.pdf
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Lect08_gm_ID_Sizing_Method.pdf
(1.47 MB, 下载次数: 88 )
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