回复 11# czym520
楼主内存耗尽怎么办，我的程序#####開啟 ATLAS TCAD 模擬#####
go atlas
#####設定結構空間之 mesh(l 為 mesh 位置，s 為 mesh 密度)#####
mesh three.d x.m l=0.0 s=0.0002 x.m l=0.004 s=0.00005 x.m l=0.005 s=0.00005 x.m l=0.01 s=0.0002 x.m l=0.013 s=0.00005 x.m l=0.014 s=0.00005 x.m l=0.018 s=0.0002 y.m l=-0.006 s=0.0005 y.m l=-0.004 s=0.0005 y.m l=-0.003 s=0.0001 y.m l=-0.002 s=0.0001 y.m l=0.0 s=0.00025 y.m l=0.002 s=0.0001 y.m l=0.003 s=0.0001 y.m l=0.004 s=0.0005 y.m l=0.006 s=0.0005 z.m l=-0.006 s=0.0005 z.m l=-0.004 s=0.0005 z.m l=-0.003 s=0.0001 z.m l=-0.002 s=0.0001 z.m l=0.0 s=0.00025 z.m l=0.002 s=0.0001 z.m l=0.003 s=0.0001 z.m l=0.004 s=0.0005 z.m l=0.006 s=0.0005
#####設定區域材料#####
region num=3 material=air
###Gate dielectric region num=2 sio2 x.min=0.005 x.max=0.013 y.min=-0.003y.max=0.003
z.min=-0.003 z.max=0.003
###S/D extension and channel region #nanowire w/ constriction region num=1 silicon x.min=0.0 x.max=0.004 y.min=-0.002 y.max=0.002 z.min=-0.002 z.max=0.002 region num=1 silicon x.min=0.004 x.max=0.005 y.min=-0.0015 y.max=0.0015 z.min=-0.0015 z.max=0.0015 region num=1 silicon x.min=0.005 x.max=0.017 y.min=-0.002 y.max=0.002 z.min=-0.002 z.max=0.002 region num=1 silicon x.min=0.017 x.max=0.018 y.min=-0.0015 y.max=0.0015 z.min=-0.0015 z.max=0.0015 region num=1 silicon x.min=0.018 x.max=0.022 y.min=-0.002 y.max=0.002 z.min=-0.002 z.max=0.002
#nanowire w/o constriction
region num=1 silicon x.min=0.0 x.max=0.018y.min=-0.002 y.max=0.002 z.min=-0.002 z.max=0.002
###Electrode region
#S/D electrode
electrode num=2 name=source x.max=0.0y.min=-0.002 y.max=0.002 z.min=-0.002 z.max=0.002
electrode num=3 name=drain x.min=0.018y.min=-0.002 y.max=0.002 z.min=-0.002 z.max=0.002
#Gate electrode
electrode num=1 name=gate x.min=0.005x.max=0.013 y.min=-0.006 y.max=-0.003 z.min=-0.006 z.max=0.006
electrode num=1 name=gate x.min=0.005x.max=0.013 y.min=0.003 y.max=0.006 z.min=-0.006 z.max=0.006
electrode num=1 name=gate x.min=0.005x.max=0.013 y.min=-0.003 y.max=0.003 z.min=0.003 z.max=0.006
electrode num=1 name=gate x.min=0.005x.max=0.013 y.min=-0.003 y.max=0.003 z.min=-0.006 z.max=-0.003
#####Contact boundary condition##### contact name=source reflect
contact name=drain reflect
contact name=gate aluminum
#####Silicon doping#####
doping region=1 n.type uniform conc=1.0E20 x.min=0.0 x.max=0.018
#####Schrodinger Poisson mesh(解 Schrodingerequation 用 mesh)#####
spx.m l=0.0 s=0.0002 spx.m l=0.004 s=0.00005 spx.m l=0.005 s=0.00005 spx.m l=0.01 s=0.0002 spx.m l=0.013 s=0.00005 spx.m l=0.014 s=0.00005 spx.m l=0.018 s=0.0002 spy.m l=-0.006 s=0.0005 spy.m l=-0.004 s=0.0005 spy.m l=-0.003 s=0.0001 spy.m l=-0.002 s=0.0001 spy.m l=0.0 s=0.00025 spy.m l=0.002 s=0.0001 spy.m l=0.003 s=0.0001 spy.m l=0.004 s=0.0005 spy.m l=0.006 s=0.0005
spz.m l=-0.006 s=0.0005 spz.m l=-0.004 s=0.0005 spz.m l=-0.003 s=0.0001 spz.m l=-0.002 s=0.0001 spz.m l=0.0 s=0.00025 spz.m l=0.002 s=0.0001 spz.m l=0.003 s=0.0001 spz.m l=0.004 s=0.0005 spz.m l=0.006 s=0.0005
#####Quantum transport model(NEGFapproach)##### output band.par con.band val.band eigens=5 impact MODELS SCHROSP.FAST NEGF_MS SP.GEOM=2Dyz method CARRIERS=0
probe Transmissionfilename="VBT_TranvsE"
#####設定模擬偏壓條件求解與輸出條件設定#####
solve init
solve v2=0.0 v3=1.0 v1=0.2
log outf=JL8nm_ALUgate_negf_Vd1V_IdVg.log
solve v2=0.0 v3=1.0 v1=0.2 vstep=-0.02vfinal=-1.2 name=gate
log off
saveoutf=JL8nm_ALUgate_negf_Vd1000mV_Vg-1200mV.str negf.log
quit | 
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发表于 2018-5-9 10:59:43
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