Physical Properties of III-V Semiconductor Compounds:

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III-V Semiconductor Compounds.pdf (6.65 MB, 下载次数: 75 )

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The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.
The ln{ _^Ga^ As^ -y/lnP heterostructure system is potentially useful for
optoelectronic, high-speed digital, and high-frequency microwave device
applications. Even though the basic In, _^Ga^As^P, _y/InP heterostructure
concept is understood at this time, some practical device parameters in this
system have been hampered by a lack of definite knowledge of many material
parameters.
The purpose of this book is twofold: (1) to discuss key properties of InP,
ln{_xGaxA^yPi,y quaternary, and In0^Ga^yAs ternary; and (2) to present
various material parameters and constants of these semiconductors for
a variety of basic research and device applications. A set of the material
properties and parameters of these semiconductors are considered in this
book. The host of effects associated with the presence of specific impurities
and defects is, however, omitted from the coverage. The model used in
some cases is based on an interpolation scheme and, therefore, necessitates
known values of the material parameters for the related binaries InP, In As,
GaAs, and GaP. Emphasis is, therefore, also placed on tnaterial properties
not only of InP but also of In As, GaAs, and GaP binaries.
It is hoped that the book will be useful to both beginning and advanced
specialists as well as to workers in related fields, thus contributing to the
further development of III-V semiconductor devices.
Gunma, Japan
May 1992
SADAO ADACHI

dcircuit

谢谢分享！

xuleiwx

很经典的书。

ben.

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icroad

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