跑通一个程序，并把lib文件编译出来

wangws

go atlas
title "Gunn Diode model VMBE 1898 – 0.7μm transit region length "

# SECTION 1: Mesh input
mesh auto cylindrical
x.mesh loc=0.0 spac=9.75
x.mesh loc=9.75 spac=9.75
x.mesh loc=19.5 spac=5.0
x.mesh loc=28.2 spac=5.0
x.mesh loc=37.0 spac=10.0
x.mesh loc=46.1 spac=10.0
y.mesh loc=0.0 spac=5.0
y.mesh loc=10.00 spac=1.0
y.mesh loc=10.250 spac=0.125
y.mesh loc=10.750 spac=0.05
y.mesh loc=10.7550 spac=0.001
y.mesh loc=10.7650 spac=0.005
y.mesh loc=10.7750 spac=0.005
y.mesh loc=10.7850 spac=0.005
y.mesh loc=10.7950 spac=0.005
y.mesh loc=10.8050 spac=0.005
y.mesh loc=10.8150 spac=0.005
y.mesh loc=10.82000 spac=0.005
y.mesh loc=11.52000 spac=0.01
y.mesh loc=12.02000 spac=0.1
y.mesh loc=20.02000 spac=0.5
y.mesh loc=20.27000 spac=0.125
y.mesh loc=22.27000 spac=0.25
# SECTION 2: Structure Specification (regions, electrodes and delta doping)
# Regions
region num=1 name=air material=air x.min=0.0 x.max=19.5 y.min=10.000 y.max=22.2700
region num=2 name=contact_c material=GaAs x.min=19.5 x.max=28.2 y.min=10.2500 \
y.max=10.7500
region num=3 name=spacer material=GaAs x.min=19.5 x.max=28.2 y.min=10.7500 \
y.max=10.7550
region num=4 name=AlGaAs_1.7 material=AlGaAs x.comp=0.017 x.min=19.5 x.max=28.2 \
y.min=10.75500 y.max=10.76500
region num=5 name=AlGaAs_8 material=AlGaAs x.comp=0.08 x.min=19.5 x.max=28.2 \
y.min=10.76500 y.max=10.77500
region num=6 name=AlGaAs_16 material=AlGaAs x.comp=0.16 x.min=19.5 x.max=28.2 \
y.min=10.77500 y.max=10.78500
region num=7 name=AlGaAs_24 material=AlGaAs x.comp=0.24 x.min=19.5 x.max=28.2 \
y.min=10.78500 y.max=10.79500
region num=8 name=AlGaAs_32 material=AlGaAs x.comp=0.32 x.min=19.5 x.max=28.2 \
y.min=10.79500 y.max=10.80500
region num=9 name=spacer material=GaAs x.min=19.5 x.max=28.2 y.min=10.80500 \
y.max=10.81500
region num=10 name=spike material=GaAs x.min=19.5 x.max=28.2 y.min=10.81500 \
y.max=10.82000
region num=11 name=transit material=GaAs x.min=19.5 x.max=28.2 y.min=10.82000 \
y.max=11.52000
region num=12 name=contact_a material=GaAs x.min=19.5 x.max=28.2 y.min=11.52000 \
y.max=12.02000
region num=13 name=substrate material=GaAs x.min=19.5 x.max=28.2 y.min=12.02000 \
y.max=20.02000
region num=14 name=air material=air x.min=28.2 x.max=46.1 y.min=10.000 y.max=22.2700
# Electrodes
elec num=1 name=anode material=Gold x.min=19.5 x.max=28.2 y.min=20.02 y.max=20.27
elec num=2 name=cathode material=Gold x.min=19.5 x.max=28.2 y.min=10.0 y.max=10.25
elec num=3 name=anode material=Gold x.min=19.5 x.max=28.2 y.min=20.27 y.max=22.27
elec num=4 name=cathode material=Gold x.min=0.0 x.max=46.1 y.min= 0.0 y.max=10.00
# Delta doping
doping uniform n.type conc=5e18 Region=2
doping uniform n.type conc=1e18 Region=10
doping uniform n.type conc=3.5e16 Region=11
doping uniform n.type conc=5e18 Region=12
doping uniform n.type conc=2e18 Region=13
# SECTION 3: Material Parameters Definitions
# Regional and Band Parameters (band gap)
material name=AlGaAs_1.7 eg300=1.445199 permittivity=13.1507 nc300=6.83e17 \
nv300=1.30e19
material name=AlGaAs_8 eg300=1.52376 permittivity=12.968 nc300=1.60e18 nv300=1.33e19
material name=AlGaAs_16 eg300=1.62352 permittivity=12.736 nc300=2.77e18 nv300=1.37e19
material name=AlGaAs_24 eg300=1.72328 permittivity=12.504 nc300=3.93e18 nv300=1.41e19
material name=AlGaAs_32 eg300=1.82304 permittivity=12.272 nc300=5.10e18 nv300=1.46e19
# Recombination Parameters (SRH)
material name=AlGaAs_1.7 taun0=4.93e-9 taup0=2e-8 NSRHN=4.92e16 NSRHP=4.92e16
material name=AlGaAs_8 taun0=4.68e-9 taup0=2e-8 NSRHN=4.60e16 NSRHP=4.60e16
material name=AlGaAs_16 taun0=4.36e-9 taup0=2e-8 NSRHN=4.20e16 NSRHP=4.20e16
material name=AlGaAs_24 taun0=4.04e-9 taup0=2e-8 NSRHN=3.80e16 NSRHP=3.80e16
material name=AlGaAs_32 taun0=3.72e-9 taup0=2e-8 NSRHN=3.40e16 NSRHP=3.40e16
# Mobility Parameters (caughey Thomas)
mobility name=substrate mu1n.caug=800 alphan.caug=-0.9 betan.caug=-2.2 \
gamman.caug=-3.1 deltan.caug=0.5 ncritn.caug=1e17 mu2n.caug=2300
mobility name=Contact_A mu1n.caug=800 alphan.caug=-0.9 betan.caug=-2.2 \
gamman.caug=3.1 deltan.caug=0.5 ncritn.caug=1e17 mu2n.caug=1350
mobility name=Transit mu1n.caug=800 alphan.caug=-0.9 betan.caug=-2.2 \
gamman.caug=-3.1 deltan.caug=0.5 ncritn.caug=1e17 mu2n.caug=6300
mobility name=Spike mu1n.caug=800 alphan.caug=-0.9 betan.caug=-2.2 \
gamman.caug=-3.1 deltan.caug=0.5 ncritn.caug=1e17 mu2n.caug=2650
mobility name=Contact_C mu1n.caug=800 alphan.caug=-0.9 betan.caug=-2.2 \
gamman.caug=3.1 deltan.caug=0.5 ncritn.caug=1e17 mu2n.caug=1350
mobility material=GaAs betan=1
mobility material=AlGaAs gamman=2
#Giga – Self Heating Simulator Model Parameters
## k(T) = (tc.const) / [(T/300)]^tc.npow
material tcon.power
material f.tcond="tcond.lib"
# C Interpreter Functions
material material=AlGaAs f.bandcomp="bandcompAl.lib"
material material=AlGaAs f.vsatn="vsatn_7e6.lib"
material material=GaAs f.vsatn="vsatn_7e6.lib"
mobility material=AlGaAs f.enmun="enmun.lib"
material material=GaAs f.munsat="munsat_GaAs.lib"
material material=AlGaAs f.munsat="munsat.lib"
#Thermal Contacts for GIGA

thermcontact number=1 name=Anode ext.temper=300
thermcontact number=2 name=Cathode ext.temper=300
# SECTION 3: Models Definitions
models material=GaAs consrh conmob analytic fldmob evsatmod=1 b.elec=2
models material=AlGaAs srh fldmob evsatmod=0 mobtem.simpl b.elec=2
models lat.temp joule.heat gr.heat
models material=AlGaAs cubic35
models hcte.el boltzmann temperature=300 print
# SECTION 4: Initial solution
# Method
method carriers=1 electrons
output e.field e.mobility e.temp e.velocity con.band val.band charge flowlines devdeg
method block newton itlimit=100 trap atrap=0.5 maxtrap=10 vsatmod.inc=0.001
# Contacts
contact all neutral
#contact name=anode neutral resistance=0.9 inductance=3.16e-12 capacitance=0.403e-12 \
# resonant
contact name=anode neutral resistance=0.9
contact name=cathode neutral
solve init
solve
save outfile=1898_P_0pt7Transit_298Ka.str
# SECTION 5a: DC I-V Simulations – Forward bias
log outf=1898_P_0pt7Transit_298K.log
solve vanode=0.0 vstep=0.1 vfinal=4.0 name=anode
save outfile=1898_P_0pt7Transit_Final_298K.str
log off
#quit

# SECTION 5b: DC I-V Simulations – Reverse bias
log outf=1898_N_0pt7Transit_298K.log
solve vanode=0.0 vstep=-0.1 vfinal=-4.0 name=anode
save outfile=1898_N_0pt7Transit_Final_298K.str
log off
#quit
# SECTION 5c: Time Domain Simulations
solve init
save outfile=1898_ATLAST_HS.str
log outfile=1898_Trans_1_HS.log
solve vanode=2.5 ramptime=2.7e-11 tstop=2.7e-11 dt=1e-12
save outfile=1898_Trans_1_HS.str
# Extract I-V Characteristic above which the Negative Resistance begins
extract name="1898_Trans_HS.dat" curve(vint."anode", i."anode") outf="1898_Trans_HS.dat"
extract name="Icrit" max(i."anode")
extract name="UMax" max(vint."anode")
extract name="Ucrit" x.val from curve(vint."anode", i."anode") where y.val=$Icrit
extract name="Ecrit" $Ucrit/7e-5
# Time Domain Simulation at 2.5V Constant External Bias
log outfile=1898_Trans_2_HS.log
solve tstop=12e-11 dt=2e-11 outfile=1898_Trans_2_x0 master
log off
extract the oscillation frequency by measuring the time for 4 periods
extract init inf="1898_Trans_2_HS.log"
extract name="v_ave" ave(vint."anode")
extract name="t1" x.val from curve(time, vint."anode") where y.val=$"v_ave"
extract name="t2" x.val from curve(time, vint."anode") where y.val=$"v_ave" and val.occno=7
extract name="delta" ($"t2" - $"t1") / 3
extract name="f@2pt5V" 1 / $"delta"
# Ramp-up to 3.0 V External Bias
load inf=1898_Trans_1_HS.str master
solve previous
solve vanode=3 ramptime=2.7e-11 tstop=2.7e-11 dt=1e-12
save outfile=1898_Trans_3_HS.str
# Time Domain Simulation at 3.0V Constant External Bias
log outfile=1898_Trans_3_HS.log
solve tstop=12e-11 dt=2e-11 outfile=1898_Trans_3_x0 master
log off
extract init inf="1898_Trans_3_HS.log"
extract name="v_ave" ave(vint."anode")
extract name="t1" x.val from curve(time,vint."anode") where y.val=$"v_ave"
extract name="t2" x.val from curve(time,vint."anode") where y.val=$"v_ave" and val.occno=7
extract name="delta" ($"t2" - $"t1") / 3
extract name="f@3V" 1 / $"delta"
quit

wangws

这是一个耿式二极管程序
其中程序不收敛
求大神帮忙