An Ultra-Wide-Band 0.4–10-GHz LNA

john_li

Abstract—A two-stage ultra-wide-band CMOS low-noise amplifier
(LNA) is presented. With the common-gate configuration employed
as the input stage, the broad-band input matching is obtained
and the noise does not rise rapidly at higher frequency.
By combining the common-gate and common-source stages, the
broad-band characteristic and small area are achieved by using
two inductors. This LNA has been fabricated in a 0.18- m CMOS
process. The measured power gain is 11.2–12.4 dB and noise figure
is 4.4–6.5 dB with 3-dB bandwidth of 0.4–10 GHz. The measured
IIP3 is 6 dBm at 6 GHz. It consumes 12mWfrom a 1.8-V supply
voltage and occupies only 0.42 mm2.
Index Terms—Common-gate configuration, ultra-wide-band

zsd2009

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chain1112

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fwutsairlin

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xueba2014

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uestc_cjh

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