同学,你太神通广大了。 我还有3篇Elsevier的论文,其中两篇和前面那篇你帮我下载的是讨论同一个问题,即impact ionization 的。还有一篇其实是关于bipolar turn on speed的。Elsevier上的文章确实不错,但很少有途径能够下载,能否再帮个忙,谢谢了!
"Electron and hole ionization rates in epitaxial silicon at high electric fields"
http://www.sciencedirect.com/science/article/pii/0038110173901470
"Investigation of the transition from tunneling to impact ionization multiplication in silicon p-n junctions"
http://www.sciencedirect.com/science/article/pii/0038110176901349
"Twointegralrelationspertaining to the electrontransport through a bipolar transistor with a nonuniform energy gap in the base region"
http://www.sciencedirect.com/science/article/pii/003811018590190X