关于ISE-TCAD中物理模型的讨论（高手请进）

cfhai

dessis中的Physics 决定仿真的结果是否对，并且和收敛性有很大关系。在手册中有介绍，但具体怎么用没有
详细解说，我将内部例子的该部分汇总了一下,高手请来指导一下:

mos esd
Physics {
    Recombination(SRH(DopingDep TempDep) Auger Avalanche(Eparallel))
    Mobility(DopingDep HighFieldSaturation Enormal)
    EffectiveIntrinsicDensity(oldSlotboom)
    Thermodynamic
    AnalTEP
}
mos vth
Physics {
  Mobility( DopingDep HighFieldsat Enormal )
  EffectiveIntrinsicDensity( OldSlotboom )
}

mos  bv
Physics {
    Recombination(SRH(DopingDependence TempDependence) Avalanche(Eparalell))
    Mobility(DopingDependence HighFieldSaturation Enormal)
    EffectiveIntrinsicDensity(oldSlotboom)   
    Thermodynamic
    AnalyticTEP
}

mos  Id-vd
Physics {
Hydrodynamic(eTemperature )
Recombination( SRH(DopingDep) eAvalanche(CarrierTempDrive) hAvalanche(Eparallel) )
Mobility( DopingDep Enormal hHighFieldSaturation(GradQuasiFermi)eHighFieldSaturation(CarrierTempDrive) )
EffectiveIntrinsicDensity(BandGapNarrowing (OldSlotboom))
}
load short
Physics {
          Recombination ( SRH(DopingDependence Tempdep)  Auger Avalanche (Eparallel) )         
         Mobility ( DopingDependence HighFieldSaturation  NormalElectricField CarrierCarrierScattering (BrooksHerring) )
         EffectiveIntrinsicDensity( Slotboom )
        Thermodynamic
        AnalTep

npn bvceo
Physics{
   Recombination(
      SRH(DopingDep)
      Auger
      Avalanche(GradQuasiFermi)
      
   )  
   Mobility( DopingDep HighFieldSaturation)
   EffectiveIntrinsicDensity( OldSlotboom )
}