IEEE－A Study of Phase Noise in CMOS Oscillators(Razavi1996)

semico_ljj

IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 31, NO. 3, MARCH 1996

A Study of Phase Noise in CMOS Oscillators

Behzad Razavi, Member, IEEE

Abstract  
    This paper presents a study of phase noise in two
inductorless CMOS oscillators. First-order analysis of a linear
oscillatory system leads to a noise shaping function and a new
definition of Q. A linear model of CMOS ring oscillators is used
to calculate their phase noise, and three phase noise phenomena,
namely, additive noise, high-frequency multiplicative noise, and
low-frequency multiplicative noise, are identified and formulated.
Based on the same concepts, a CMOS relaxation oscillator is also
analyzed. Issues and techniques related to simulation of noise in
the time domain are described, and two prototypes fabricated in a
0.5-m CMOS technology are used to investigate the accuracy of
the theoretical predictions. Compared with the measured results,
the calculated phase noise values of a 2-GHz ring oscillator and
a 900-MHz relaxation oscillator at 5 MHz offset have an error
of approximately 4 dB.

一篇Phase Noise 入门（Guide）

IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 31, NO. 3, MARCH 1996

[ 本帖最后由 semico_ljj 于 2006-11-22 15:36 编辑 ]

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