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[资料] Design And Application Guide for High Speed MOSFET Gate Drive Circuits

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发表于 2010-10-31 17:29:24 | 显示全部楼层 |阅读模式

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ABSTRACT
The main purpose of this paper is to demonstrate a systematic approach to design high performance
gate drive circuits for high speed switching applications. It is an informative collection of topics offering
a “one-stop-shopping” to solve the most common design challenges. Thus it should be of interest to
power electronics engineers at all levels of experience.
The most popular circuit solutions and their performance are analyzed, including the effect of parasitic
components, transient and extreme operating conditions. The discussion builds from simple to more
complex problems starting with an overview of MOSFET technology and switching operation. Design
procedure for ground referenced and high side gate drive circuits, AC coupled and transformer isolated
solutions are described in great details. A special chapter deals with the gate drive requirements of the
MOSFETs in synchronous rectifier applications.

Design And Application Guide for High Speed MOSFET Gate Drive Circuits.pdf

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头像被屏蔽
发表于 2010-10-31 18:46:54 | 显示全部楼层
提示: 作者被禁止或删除 内容自动屏蔽
发表于 2010-11-1 05:29:50 | 显示全部楼层
ding kan kan
发表于 2010-11-1 07:59:43 | 显示全部楼层
tks for your sharing
发表于 2010-11-2 17:20:36 | 显示全部楼层
谢谢~~
发表于 2010-11-5 23:07:49 | 显示全部楼层
不错,谢谢分享!
发表于 2010-12-8 16:14:36 | 显示全部楼层
这方面比较缺,要学习学习!!
发表于 2010-12-8 18:54:00 | 显示全部楼层
好,顶这个....
发表于 2010-12-9 12:36:37 | 显示全部楼层
不错,赞一个。
发表于 2011-7-22 11:21:37 | 显示全部楼层
我来学习一下,顶楼主!
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