[悬赏500金]Sentaurus Topography and Lithography

gman

hi guys,
i am looking for Sentaurus Topography and lithography for long time but could not find it......if anyone have it please share it.


这是本版gman兄求的软件。请大家上传，为了奖励，本版主将奖励500金作为悬赏。

另外synopsys taurus里面的medici tsuprem都已编入索引，不知道有谁能上传一下配套软件taurus visual。本版主将奖励200金作为悬赏。

Sentaurus Topo and Litho graphy...still have hope

Overview Sentaurus Topography Advanced Topography Simulator Overview Sentaurus Topography is an advanced two-dimensional simulator for the physical modeling of topographymodifying process steps such as deposition, etching, spin-on-glass, reflow, and chemical-mechanical polishing. It supports complex process structures of multiple layers with different material properties, and it uses advanced physical models and numeric algorithms. Sentaurus Topography is ideal for predicting the topography of back-end processes by simulating the complex steps used to build the interconnect layers. Process development engineers can use Sentaurus Topography to optimize existing processes and to develop new process flows. In manufacturing, Sentaurus Topography is a key tool to study the effects of misalignment and process variation to improve process capability and yield. In addition, the interface between Sentaurus Topography and Sentaurus Process allows users to combine frontend thermal and topography simulations in one environment. Sentaurus Topography is fully integrated into Sentaurus Workbench, the state-of-the-art Synopsys TCAD framework and visualization tool. Benefits • Simulates profile evolutions of deposition and etching processes, including APCVD, LPCVD, PECVD, HDP CVD, wet etch, reactive ion etch (RIE), ion milling, and sputter etch • Emulates reflow, spin-on-glass, and chemical-mechanical polishing • Simulates etching characteristics under different reactor conditions leading to sidewall bowing, etchback planarization, and RIE lag effects • Investigates impact of sidewall angle and deposition conditions on trench or contact filling and void formation • Characterizes plasma discharge and sheath transport mechanisms including plasma (ions and neutral) angle and energy distribution at wafer surface Description The rising complexity in process technologies – more metal layers, smaller geometries with high aspect ratio structures, tighter specifications for film thickness uniformity, and new materials – contributes to significant challenges in process development and integration. Sentaurus Topography can help process engineers meet these challenges. The tool combines flexible models for common topography-modifying process steps with robust level set methods to handle difficult numeric problems resulting from boundary evolution in topography simulation. Sentaurus Topography creates two-dimensional structures using a command language describing the process flow. In addition, boundary files (in TDR or SAT format) of the structures created by Sentaurus Process or Sentaurus Structure Editor can be imported by Sentaurus Topography. Conversely, boundary files written by Sentaurus Topography can be used for further processing in Sentaurus Process or Sentaurus Structure Editor. Structure generation in Sentaurus Topography includes geometric deposition and etching modes, which can be used to generate initial structures for machine-based deposition and etching. Sentaurus Lithography Predictive Computational Lithography for Accelerated Process Development Overview Sentaurus Lithography represents advanced lithography process simulation within TCAD Sentaurus, the physics-oriented technology simulation product family. It covers a range of applications in optical, immersion, extreme ultraviolet (EUV), and electron beam (e-beam) lithography, allowing thorough analysis of fundamental effects within the illumination and projection systems of an exposure tool, predicting the impact of mask and wafer topography on photoresist profiles. While simulation is important to address the lithography challenges of a certain technology node, the integration of simulation into process development, design, and manufacturing flows is just as essential. Integrating Sentaurus Lithography with Sentaurus Topography allows a seamless modeling of complex technologies such as double-patterning. The interfaces of Sentaurus Lithography to other Synopsys applications in the area of design and mask synthesis accelerate the generation of optical proximity correction (OPC) models, minimizing process variability. Technology simulation plays an invaluable role in the field of advanced process development and optimization. Simulation effectively minimizes experimental engineering lots and short-loop experiments, resulting in accelerated process development, considerable cost-savings, and a faster time-tomarket. Sentaurus Lithography provides all the computational lithography capabilities necessary to enable engineers to make precise and reliable predictions on the performance of lithography processes and strategies. Individual modules of Sentaurus Lithography address challenges in all relevant areas. Sentaurus Lithography offers a comprehensive feature set, using the predictive power of computational lithography to cost-effectively explore complex technology options, defining the lithography strategy for current and future technology nodes, extending from single exposures in dry lithography to the application of immersion and multiple exposure or patterning techniques. In addition, effects specific to EUV and e-beam lithography can be investigated. All features are embedded in an intuitive graphical user interface, which allows engineers to navigate easily through a wide range of lithography simulation capabilities. Extensive scripting functionality allows users to set up and automate complex simulation scenarios, and supports the integration into customized workflows. Advanced algorithms of Sentaurus Lithography use state-ofthe- art hardware resources such as multicore CPUs or highperformance computation clusters in an optimum way, which enables engineers to address highly complex, multidimensional problems or the simulation of large areas in a timely manner. Benefits Explore major technology options for manufacturability Immersion lithography over arbitrary wafer topography Double-patterning techniques EUV lithography E-beam lithography Optimize process windows and analyze process variability Guide experiments for efficient process development Evaluate impact of restrictive design rules on resist contours..................................................................... Sentaurus Topography Advanced Topography Simulator Overview Sentaurus Topography is an advanced two-dimensional simulator for the physical modeling of topographymodifying process steps such as deposition, etching, spin-on-glass, reflow, and chemical-mechanical polishing. It supports complex process structures of multiple layers with different material properties, and it uses advanced physical models and numeric algorithms. Sentaurus Topography is ideal for predicting the topography of back-end processes by simulating the complex steps used to build the interconnect layers. Process development engineers can use Sentaurus Topography to optimize existing processes and to develop new process flows. In manufacturing, Sentaurus Topography is a key tool to study the effects of misalignment and process variation to improve process capability and yield. In addition, the interface between Sentaurus Topography and Sentaurus Process allows users to combine frontend thermal and topography simulations in one environment. Sentaurus Topography is fully integrated into Sentaurus Workbench, the state-of-the-art Synopsys TCAD framework and visualization tool. Benefits • Simulates profile evolutions of deposition and etching processes, including APCVD, LPCVD, PECVD, HDP CVD, wet etch, reactive ion etch (RIE), ion milling, and sputter etch • Emulates reflow, spin-on-glass, and chemical-mechanical polishing • Simulates etching characteristics under different reactor conditions leading to sidewall bowing, etchback planarization, and RIE lag effects • Investigates impact of sidewall angle and deposition conditions on trench or contact filling and void formation • Characterizes plasma discharge and sheath transport mechanisms including plasma (ions and neutral) angle and energy distribution at wafer surface Description The rising complexity in process technologies – more metal layers, smaller geometries with high aspect ratio structures, tighter specifications for film thickness uniformity, and new materials – contributes to significant challenges in process development and integration. Sentaurus Topography can help process engineers meet these challenges. The tool combines flexible models for common topography-modifying process steps with robust level set methods to handle difficult numeric problems resulting from boundary evolution in topography simulation. Sentaurus Topography creates two-dimensional structures using a command language describing the process flow. In addition, boundary files (in TDR or SAT format) of the structures created by Sentaurus Process or Sentaurus Structure Editor can be imported by Sentaurus Topography. Conversely, boundary files written by Sentaurus Topography can be used for further processing in Sentaurus Process or Sentaurus Structure Editor. Structure generation in Sentaurus Topography includes geometric deposition and etching modes, which can be used to generate initial structures for machine-based deposition and etching. Sentaurus Lithography Predictive Computational Lithography for Accelerated Process Development Overview Sentaurus Lithography represents advanced lithography process simulation within TCAD Sentaurus, the physics-oriented technology simulation product family. It covers a range of applications in optical, immersion, extreme ultraviolet (EUV), and electron beam (e-beam) lithography, allowing thorough analysis of fundamental effects within the illumination and projection systems of an exposure tool, predicting the impact of mask and wafer topography on photoresist profiles. While simulation is important to address the lithography challenges of a certain technology node, the integration of simulation into process development, design, and manufacturing flows is just as essential. Integrating Sentaurus Lithography with Sentaurus Topography allows a seamless modeling of complex technologies such as double-patterning. The interfaces of Sentaurus Lithography to other Synopsys applications in the area of design and mask synthesis accelerate the generation of optical proximity correction (OPC) models, minimizing process variability. Technology simulation plays an invaluable role in the field of advanced process development and optimization. Simulation effectively minimizes experimental engineering lots and short-loop experiments, resulting in accelerated process development, considerable cost-savings, and a faster time-tomarket. Sentaurus Lithography provides all the computational lithography capabilities necessary to enable engineers to make precise and reliable predictions on the performance of lithography processes and strategies. Individual modules of Sentaurus Lithography address challenges in all relevant areas. Sentaurus Lithography offers a comprehensive feature set, using the predictive power of computational lithography to cost-effectively explore complex technology options, defining the lithography strategy for current and future technology nodes, extending from single exposures in dry lithography to the application of immersion and multiple exposure or patterning techniques. In addition, effects specific to EUV and e-beam lithography can be investigated. All features are embedded in an intuitive graphical user interface, which allows engineers to navigate easily through a wide range of lithography simulation capabilities. Extensive scripting functionality allows users to set up and automate complex simulation scenarios, and supports the integration into customized workflows. Advanced algorithms of Sentaurus Lithography use state-ofthe- art hardware resources such as multicore CPUs or highperformance computation clusters in an optimum way, which enables engineers to address highly complex, multidimensional problems or the simulation of large areas in a timely manner. Benefits Explore major technology options for manufacturability Immersion lithography over arbitrary wafer topography Double-patterning techniques EUV lithography E-beam lithography Optimize process windows and analyze process variability Guide experiments for efficient process development Evaluate impact of restrictive design rules on resist contours.....................................................................

Sentaurus Topography Advanced Topography Simulator Overview Sentaurus Topography is an advanced two-dimensional simulator for the physical modeling of topographymodifying process steps such as deposition, etching, spin-on-glass, reflow, and chemical-mechanical polishing. It supports complex process structures of multiple layers with different material properties, and it uses advanced physical models and numeric algorithms. Sentaurus Topography is ideal for predicting the topography of back-end processes by simulating the complex steps used to build the interconnect layers. Process development engineers can use Sentaurus Topography to optimize existing processes and to develop new process flows. In manufacturing, Sentaurus Topography is a key tool to study the effects of misalignment and process variation to improve process capability and yield. In addition, the interface between Sentaurus Topography and Sentaurus Process allows users to combine frontend thermal and topography simulations in one environment. Sentaurus Topography is fully integrated into Sentaurus Workbench, the state-of-the-art Synopsys TCAD framework and visualization tool. Benefits • Simulates profile evolutions of deposition and etching processes, including APCVD, LPCVD, PECVD, HDP CVD, wet etch, reactive ion etch (RIE), ion milling, and sputter etch • Emulates reflow, spin-on-glass, and chemical-mechanical polishing • Simulates etching characteristics under different reactor conditions leading to sidewall bowing, etchback planarization, and RIE lag effects • Investigates impact of sidewall angle and deposition conditions on trench or contact filling and void formation • Characterizes plasma discharge and sheath transport mechanisms including plasma (ions and neutral) angle and energy distribution at wafer surface Description The rising complexity in process technologies – more metal layers, smaller geometries with high aspect ratio structures, tighter specifications for film thickness uniformity, and new materials – contributes to significant challenges in process development and integration. Sentaurus Topography can help process engineers meet these challenges. The tool combines flexible models for common topography-modifying process steps with robust level set methods to handle difficult numeric problems resulting from boundary evolution in topography simulation. Sentaurus Topography creates two-dimensional structures using a command language describing the process flow. In addition, boundary files (in TDR or SAT format) of the structures created by Sentaurus Process or Sentaurus Structure Editor can be imported by Sentaurus Topography. Conversely, boundary files written by Sentaurus Topography can be used for further processing in Sentaurus Process or Sentaurus Structure Editor. Structure generation in Sentaurus Topography includes geometric deposition and etching modes, which can be used to generate initial structures for machine-based deposition and etching. Sentaurus Lithography Predictive Computational Lithography for Accelerated Process Development Overview Sentaurus Lithography represents advanced lithography process simulation within TCAD Sentaurus, the physics-oriented technology simulation product family. It covers a range of applications in optical, immersion, extreme ultraviolet (EUV), and electron beam (e-beam) lithography, allowing thorough analysis of fundamental effects within the illumination and projection systems of an exposure tool, predicting the impact of mask and wafer topography on photoresist profiles. While simulation is important to address the lithography challenges of a certain technology node, the integration of simulation into process development, design, and manufacturing flows is just as essential. Integrating Sentaurus Lithography with Sentaurus Topography allows a seamless modeling of complex technologies such as double-patterning. The interfaces of Sentaurus Lithography to other Synopsys applications in the area of design and mask synthesis accelerate the generation of optical proximity correction (OPC) models, minimizing process variability. Technology simulation plays an invaluable role in the field of advanced process development and optimization. Simulation effectively minimizes experimental engineering lots and short-loop experiments, resulting in accelerated process development, considerable cost-savings, and a faster time-tomarket. Sentaurus Lithography provides all the computational lithography capabilities necessary to enable engineers to make precise and reliable predictions on the performance of lithography processes and strategies. Individual modules of Sentaurus Lithography address challenges in all relevant areas. Sentaurus Lithography offers a comprehensive feature set, using the predictive power of computational lithography to cost-effectively explore complex technology options, defining the lithography strategy for current and future technology nodes, extending from single exposures in dry lithography to the application of immersion and multiple exposure or patterning techniques. In addition, effects specific to EUV and e-beam lithography can be investigated. All features are embedded in an intuitive graphical user interface, which allows engineers to navigate easily through a wide range of lithography simulation capabilities. Extensive scripting functionality allows users to set up and automate complex simulation scenarios, and supports the integration into customized workflows. Advanced algorithms of Sentaurus Lithography use state-ofthe- art hardware resources such as multicore CPUs or highperformance computation clusters in an optimum way, which enables engineers to address highly complex, multidimensional problems or the simulation of large areas in a timely manner. Benefits Explore major technology options for manufacturability Immersion lithography over arbitrary wafer topography Double-patterning techniques EUV lithography E-beam lithography Optimize process windows and analyze process variability Guide experiments for efficient process development Evaluate impact of restrictive design rules on resist contours.....................................................................

http://bbs.eetop.cn/viewthread.php?tid=177015&highlight=taurus

Sentaurus Topography Advanced Topography Simulator Overview Sentaurus Topography is an advanced two-dimensional simulator for the physical modeling of topographymodifying process steps such as deposition, etching, spin-on-glass, reflow, and chemical-mechanical polishing. It supports complex process structures of multiple layers with different material properties, and it uses advanced physical models and numeric algorithms. Sentaurus Topography is ideal for predicting the topography of back-end processes by simulating the complex steps used to build the interconnect layers. Process development engineers can use Sentaurus Topography to optimize existing processes and to develop new process flows. In manufacturing, Sentaurus Topography is a key tool to study the effects of misalignment and process variation to improve process capability and yield. In addition, the interface between Sentaurus Topography and Sentaurus Process allows users to combine frontend thermal and topography simulations in one environment. Sentaurus Topography is fully integrated into Sentaurus Workbench, the state-of-the-art Synopsys TCAD framework and visualization tool. Benefits • Simulates profile evolutions of deposition and etching processes, including APCVD, LPCVD, PECVD, HDP CVD, wet etch, reactive ion etch (RIE), ion milling, and sputter etch • Emulates reflow, spin-on-glass, and chemical-mechanical polishing • Simulates etching characteristics under different reactor conditions leading to sidewall bowing, etchback planarization, and RIE lag effects • Investigates impact of sidewall angle and deposition conditions on trench or contact filling and void formation • Characterizes plasma discharge and sheath transport mechanisms including plasma (ions and neutral) angle and energy distribution at wafer surface Description The rising complexity in process technologies – more metal layers, smaller geometries with high aspect ratio structures, tighter specifications for film thickness uniformity, and new materials – contributes to significant challenges in process development and integration. Sentaurus Topography can help process engineers meet these challenges. The tool combines flexible models for common topography-modifying process steps with robust level set methods to handle difficult numeric problems resulting from boundary evolution in topography simulation. Sentaurus Topography creates two-dimensional structures using a command language describing the process flow. In addition, boundary files (in TDR or SAT format) of the structures created by Sentaurus Process or Sentaurus Structure Editor can be imported by Sentaurus Topography. Conversely, boundary files written by Sentaurus Topography can be used for further processing in Sentaurus Process or Sentaurus Structure Editor. Structure generation in Sentaurus Topography includes geometric deposition and etching modes, which can be used to generate initial structures for machine-based deposition and etching. Sentaurus Lithography Predictive Computational Lithography for Accelerated Process Development Overview Sentaurus Lithography represents advanced lithography process simulation within TCAD Sentaurus, the physics-oriented technology simulation product family. It covers a range of applications in optical, immersion, extreme ultraviolet (EUV), and electron beam (e-beam) lithography, allowing thorough analysis of fundamental effects within the illumination and projection systems of an exposure tool, predicting the impact of mask and wafer topography on photoresist profiles. While simulation is important to address the lithography challenges of a certain technology node, the integration of simulation into process development, design, and manufacturing flows is just as essential. Integrating Sentaurus Lithography with Sentaurus Topography allows a seamless modeling of complex technologies such as double-patterning. The interfaces of Sentaurus Lithography to other Synopsys applications in the area of design and mask synthesis accelerate the generation of optical proximity correction (OPC) models, minimizing process variability. Technology simulation plays an invaluable role in the field of advanced process development and optimization. Simulation effectively minimizes experimental engineering lots and short-loop experiments, resulting in accelerated process development, considerable cost-savings, and a faster time-tomarket. Sentaurus Lithography provides all the computational lithography capabilities necessary to enable engineers to make precise and reliable predictions on the performance of lithography processes and strategies. Individual modules of Sentaurus Lithography address challenges in all relevant areas. Sentaurus Lithography offers a comprehensive feature set, using the predictive power of computational lithography to cost-effectively explore complex technology options, defining the lithography strategy for current and future technology nodes, extending from single exposures in dry lithography to the application of immersion and multiple exposure or patterning techniques. In addition, effects specific to EUV and e-beam lithography can be investigated. All features are embedded in an intuitive graphical user interface, which allows engineers to navigate easily through a wide range of lithography simulation capabilities. Extensive scripting functionality allows users to set up and automate complex simulation scenarios, and supports the integration into customized workflows. Advanced algorithms of Sentaurus Lithography use state-ofthe- art hardware resources such as multicore CPUs or highperformance computation clusters in an optimum way, which enables engineers to address highly complex, multidimensional problems or the simulation of large areas in a timely manner. Benefits Explore major technology options for manufacturability Immersion lithography over arbitrary wafer topography Double-patterning techniques EUV lithography E-beam lithography Optimize process windows and analyze process variability Guide experiments for efficient process development Evaluate impact of restrictive design rules on resist contours.....................................................................

Sentaurus Topography Advanced Topography Simulator Overview Sentaurus Topography is an advanced two-dimensional simulator for the physical modeling of topographymodifying process steps such as deposition, etching, spin-on-glass, reflow, and chemical-mechanical polishing. It supports complex process structures of multiple layers with different material properties, and it uses advanced physical models and numeric algorithms. Sentaurus Topography is ideal for predicting the topography of back-end processes by simulating the complex steps used to build the interconnect layers. Process development engineers can use Sentaurus Topography to optimize existing processes and to develop new process flows. In manufacturing, Sentaurus Topography is a key tool to study the effects of misalignment and process variation to improve process capability and yield. In addition, the interface between Sentaurus Topography and Sentaurus Process allows users to combine frontend thermal and topography simulations in one environment. Sentaurus Topography is fully integrated into Sentaurus Workbench, the state-of-the-art Synopsys TCAD framework and visualization tool. Benefits • Simulates profile evolutions of deposition and etching processes, including APCVD, LPCVD, PECVD, HDP CVD, wet etch, reactive ion etch (RIE), ion milling, and sputter etch • Emulates reflow, spin-on-glass, and chemical-mechanical polishing • Simulates etching characteristics under different reactor conditions leading to sidewall bowing, etchback planarization, and RIE lag effects • Investigates impact of sidewall angle and deposition conditions on trench or contact filling and void formation • Characterizes plasma discharge and sheath transport mechanisms including plasma (ions and neutral) angle and energy distribution at wafer surface Description The rising complexity in process technologies – more metal layers, smaller geometries with high aspect ratio structures, tighter specifications for film thickness uniformity, and new materials – contributes to significant challenges in process development and integration. Sentaurus Topography can help process engineers meet these challenges. The tool combines flexible models for common topography-modifying process steps with robust level set methods to handle difficult numeric problems resulting from boundary evolution in topography simulation. Sentaurus Topography creates two-dimensional structures using a command language describing the process flow. In addition, boundary files (in TDR or SAT format) of the structures created by Sentaurus Process or Sentaurus Structure Editor can be imported by Sentaurus Topography. Conversely, boundary files written by Sentaurus Topography can be used for further processing in Sentaurus Process or Sentaurus Structure Editor. Structure generation in Sentaurus Topography includes geometric deposition and etching modes, which can be used to generate initial structures for machine-based deposition and etching. Sentaurus Lithography Predictive Computational Lithography for Accelerated Process Development Overview Sentaurus Lithography represents advanced lithography process simulation within TCAD Sentaurus, the physics-oriented technology simulation product family. It covers a range of applications in optical, immersion, extreme ultraviolet (EUV), and electron beam (e-beam) lithography, allowing thorough analysis of fundamental effects within the illumination and projection systems of an exposure tool, predicting the impact of mask and wafer topography on photoresist profiles. While simulation is important to address the lithography challenges of a certain technology node, the integration of simulation into process development, design, and manufacturing flows is just as essential. Integrating Sentaurus Lithography with Sentaurus Topography allows a seamless modeling of complex technologies such as double-patterning. The interfaces of Sentaurus Lithography to other Synopsys applications in the area of design and mask synthesis accelerate the generation of optical proximity correction (OPC) models, minimizing process variability. Technology simulation plays an invaluable role in the field of advanced process development and optimization. Simulation effectively minimizes experimental engineering lots and short-loop experiments, resulting in accelerated process development, considerable cost-savings, and a faster time-tomarket. Sentaurus Lithography provides all the computational lithography capabilities necessary to enable engineers to make precise and reliable predictions on the performance of lithography processes and strategies. Individual modules of Sentaurus Lithography address challenges in all relevant areas. Sentaurus Lithography offers a comprehensive feature set, using the predictive power of computational lithography to cost-effectively explore complex technology options, defining the lithography strategy for current and future technology nodes, extending from single exposures in dry lithography to the application of immersion and multiple exposure or patterning techniques. In addition, effects specific to EUV and e-beam lithography can be investigated. All features are embedded in an intuitive graphical user interface, which allows engineers to navigate easily through a wide range of lithography simulation capabilities. Extensive scripting functionality allows users to set up and automate complex simulation scenarios, and supports the integration into customized workflows. Advanced algorithms of Sentaurus Lithography use state-ofthe- art hardware resources such as multicore CPUs or highperformance computation clusters in an optimum way, which enables engineers to address highly complex, multidimensional problems or the simulation of large areas in a timely manner. Benefits Explore major technology options for manufacturability Immersion lithography over arbitrary wafer topography Double-patterning techniques EUV lithography E-beam lithography Optimize process windows and analyze process variability Guide experiments for efficient process development Evaluate impact of restrictive design rules on resist contours.....................................................................

marsf

these soft only in usa

gman

why it could not be leaked........

agge

lz啊，我也想要呢，搞到了么？

sawan

这个应该是美国政府禁运的软件，国内估计搞不到

zyf___wh

这个应该是美国政府禁运的软件，国内估计搞不到

jiancongwoo

看了一下，这个工具书做Litho 和VCMP的东西，主要是在65nm一下工艺使用，做工艺DFM的仿真的。
2种人可能用。
1.FAB的人，做工艺开发--->目前国内的代工企业也就是SMIC进入了65nm的工艺吧？ 但是SMIC应该有这个软件，天朝没有少给他钱。
2.DesignHouse里头的人，不过如果是使用TSMC的工艺的话，Litho(OCP)&VCMP，可以不需要做，我们做的40nm的工艺Yield可以达到80%。 如果都有本事开发到65nm或者以下的工艺了，还没有钱去买正版？

建议，买正版的去，个人自己玩，没有必要，而且你也研究不出啥东西出来。
个人认为，找这个软件是从商业目的出发的。


老美禁运的东西能难得到天朝？

jiancongwoo

版主
不知道你是不懂半导体行业还是有心，看下本版的宗旨。
这个帖子一发，很可能被这个版主和谐哦！
发完抓个图。
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