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发表于 2009-9-9 07:27:55
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原帖由 zlh95222 于 2009-9-7 08:20 发表
请帮忙下载ieee文章敬爱的论坛版主以及各位大虾,载下需要ieee的文章,不知那位可以帮忙下载?
s.colak,IEEE trans electron Dev ED-28 P1445(1981)
先在这里谢过了!
Effects of drift region parameters on the static properties of power LDMOST
Colak, S.
This paper appears in: Electron Devices, IEEE Transactions on
Publication Date: Dec 1981
Volume: 28, Issue: 12
On page(s): 1455- 1466
ISSN: 0018-9383
Current Version Published: 2005-08-09
Abstract
The effects of the drift region geometry and the physical parameters on the thin layer (resurfed) lateral DMOS transistor operation have been studied for both the static on-state and the off-state. The variations of breakdown voltage with drift region parameters were investigated using numerical modeling and compared to the experimental results. The operation of the LDMOST in the on-channel condition was modeled semi-empirically. The analytical and experimental results show that the operation of the device depends strongly on the geometry and the physical parameters of the drift region, particularly at high gate voltages and low drain voltages. Design guidelines for the lateral DMOS transistor for switching applications are discussed.
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