关于IC设计..RMB求助...

dcy5915

好奇怪的题目

workerabc

Based on the square-law equations:

ID=0.5*un*Cox*W/L*(VG-Vth)^2*(1+lamba*VD);
gm=derivation of ID to VG=un*Cox*W/L*(VG-Vth)*(1+lamba*VD);
gd=derivation of ID to VD=0.5*un*Cox*W/L*(VG-Vth)^2*lamba;

1. Build up a circuit with the specified NMOS: DC source with the DC parameter - VG at the gate terminal and DC source with the DC parameter - VD at the drain terminal; The source terminal and bulk terminal of the NMOS are all tied to the ground.
2. DC analysis: sweep the VG for the drain current (0V - whatever the device can tolerate) with different VD (e.g. 0.5, 1, 1.5, ..) using the parameter analysis.
    The VD should be big enough to let the device work in saturation region. Draw the ID-VG plots for different VD.
3. Do the derivation of the plot ID-VG using the calculator tool: you get the gm-VG plot;
4. Using the gm-VG plot and ID-VG plot to get the Vth versus VG: Vth = VG - 2*ID/gm, VG is the x-axis of either gm-VG plot or ID-VG plot; You get the Vth first.
5. Similar to step 2, 3, and 4, draw the ID-VD and gd-VD plot: 1/lamba=ID/gd-VDS, you get the lamba;
6. Using the lamba, Vth, W/L and any plot of the ID-VD, ID-VG, gm_VG, or gd_VD to get the un*Cox;

sli103105

how many unkowns then will need how many data points at
sat region, good luck,

davidQ

你给的是MODEL？这个很简单的啦。

122013137

好奇怪的题目

langtaosha

我也没整过，但感觉应该是提模型参数并仿真验证这些参数的问题！仿真一些不同偏置工作点的IV曲线，在已知IV方城下，从仿真曲线中确定IV方程的系数参数

Areky

骗子啊。.是骗别人download你的东西。收点money的吧,
干吗不直接贴出来。有点不厚道.还搞一个包包.让人上当...