再次寻求IEEE ESD论文，谢谢！

semico_ljj · 发表于 2009-1-13 18:05:19

马上注册，结交更多好友，享用更多功能，让你轻松玩转社区。

您需要登录才可以下载或查看，没有账号？注册

x

新的一篇，谢谢！
“ESD protection design in TSMC 0.35-μm CMOS cell library,” Ming-Dou Ker, H.-H. Chang, C.-C. Wang, and H.-R. Yeng
Proc. of 1998 International Conference on Computer Systems Technology for Industrial Applications--Chip Technology, Taiwan, Apr. 8-10, 1998, pp. 63-67.

还有一篇，谢谢！
“Design strategy on electrostatic discharge (ESD) protection for nano-scale CMOS integrated circuits (invited paper),”
Ming-Dou Ker
Proc. of 2004 Taiwan International Conference on Nano Science and Technology (TICON), Hsinchu, Taiwan, Jun. 30-Jul. 3, 2004, pp. 132-137.

寻求IEEE ESD论文，谢谢！谢谢！谢谢！谢谢！谢谢！谢谢！

K.-H. Oh, C. Duvvury, K. Banerjee, and W. Dutton, “Impact of
gate-to-contact spacing on ESD performance of salicided deep submicron
nMOS transistors,” IEEE Trans. Electron Devices, vol. 49, pp.
2183–2192, Dec. 2002.

T.-Y. Chen, M.-D. Ker, and C.-Y. Wu, “Experimental investigation on
the HBM ESD characteristics of CMOS devices in a 0.35-m silicided
process,” in Proc. Int. Symp. VLSI Technology, Systems, and Applications,
1999, pp. 35–38.

谢谢！谢谢！谢谢！谢谢！谢谢！谢谢！

[ 本帖最后由 semico_ljj 于 2009-1-16 21:02 编辑 ]

zhukh · 发表于 2009-1-13 18:22:21

Kwang-Hoon, O., et al., Impact of gate-to-contact spacing on ESD performance of salicided deep submicron NMOS transistors. Electron Devices, IEEE Transactions on, 2002. 49(12): p. 2183-2192.

zhukh · 发表于 2009-1-13 18:27:26

Experimental investigation on the HBM ESD characteristics of CMOS devices in 0.35-um salicide process

semico_ljj · 发表于 2009-1-13 19:56:18

真是快，谢谢！

semico_ljj · 发表于 2009-1-13 19:58:06

tyatzju · 发表于 2009-1-13 20:55:10

嘿嘿，毕业了以后倒是可以这样求论文的啊

semico_ljj · 发表于 2009-1-13 21:12:22

互助，好好好！

semico_ljj · 发表于 2009-1-16 17:06:31

semico_ljj · 发表于 2009-1-18 19:47:39

请求帮助。。

semico_ljj · 发表于 2009-1-19 11:26:42

寻求帮助。。。唉

再次寻求IEEE ESD论文，谢谢！

马上注册，结交更多好友，享用更多功能，让你轻松玩转社区。

相关帖子

站长推荐 /2