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[原创] 求助:帮忙下一篇论文,谢谢

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发表于 2023-1-9 17:54:45 | 显示全部楼层 |阅读模式

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https://searchworks.stanford.edu/articles/bth__153153077
A Transimpedance-to-Noise Optimized Analog Front-End With High PSRR for Pulsed ToF Lidar Receivers.
Authors:Khoeini, Farzad
Hadidian, Bahareh
Zhang, Keshu
Afshari, EhsanSource:IEEE Transactions on Circuits & Systems. Part I: Regular Papers. Sep2021, Vol. 68 Issue 9, p3642-3655. 14p.Publication Date:2021-09-01Language:English

Abstract
Abstract:This paper presents a transimpedance-to-noise optimization approach for design of a resistive shunt-feedback TIA. This optimization offers an enhancement in the transimpedance and a noise performance very close to the theoretical minimum noise of the TIA. In addition, the transimpedance-to-noise optimization approach results in a small front-end FET size which enables a further reduction in power and area. Moreover, this approach enables using a fewer number of stages in the receiver chain which makes a high PSRR feasible and obviates the necessity for using an offset cancellation circuitry. Building on this approach, a fully differential analog front-end including a resistive shunt-feedback TIA and a post amplifier (PA) for time-of-flight (ToF) Lidar receivers is designed and implemented, achieving 94dB Ω transimpedance gain, 71nA input-referred rms noise current, −3dB bandwidth of 340MHz, and power supply rejection ratio (PSRR) of more than 87dB in a 0.11 μm CMOS process. The associated DC power consumption is 19.4mW with V DD of 1.8V. Moreover, a push-pull buffer with 1V output swing is integrated for driving 50 Ω loads, such as off-chip time discriminators, which also additionally amplifies the signal with a gain of 5dB while consuming an extra 20.9mW of DC power. The whole chip (excluding pads) occupies 210 μm × 110 μm in area. [ABSTRACT FROM AUTHOR]

Subjects
Subjects:Power resources
LIDAR
Complementary metal oxide semiconductors
Signal-to-noise ratio
Field-effect transistors

Details
FormateriodicalDOI:10.1109/TCSI.2021.3089098Database:Business Source CompleteJournal:IEEE Transactions on Circuits & Systems. Part I: Regular PapersVolume:68Issue:9Page Start:3642Page Count:14ISSN:15498328


发表于 2023-1-9 20:37:52 | 显示全部楼层
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 楼主| 发表于 2023-1-10 09:31:41 | 显示全部楼层


谢谢,非常感谢!
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