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发表于 2015-10-27 16:56:46
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版图上的技巧,fab 的design rule 上都有交待,特别是tsmc 的文件,大部分都说明的很清楚。
至于失效案例,你可以读一下底下这篇论文 :
"ESD failure mechanisms of analog I/O cells in 0.18-μm CMOS technology"
Ming-Dou Ker .etc.
IEEE Transactions on Device and Materials Reliability.
Year: 2006, Volume: 6, Issue: 1
Pages: 102 - 111, DOI: 10.1109/TDMR.2006.871414
Cited by: Papers (7) |
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