How to choose Vds in analog design based on 2id/gm methodology

JoyShockley · 发表于 2013-7-11 18:22:10

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本帖最后由 JoyShockley 于 2013-7-11 18:23 编辑

If the transitor appears in the small signal model of an amplifier and is required to contribute to the DC gain of the amplifier, the best Vds is about 2 or 3 times greater than Vov. In my study about 2id/gm methodology, I find the intrinsic gain of a transistor only relates to the L and the ratio K of Vds and Vov (or V* mentioned in EE240 from UCB), and only when the ratio reaches to 2 to 3, there is a certain intrinsic gain of a transistor.

Fig. 1 shows the relationship between the intrinsic gain and the ratio K as well as L, which could prove the above arguments. All data are mesured in TSMC 130nm technology.

Note that the expression of DC gain of a amplifier could convert into the expression of the correspondent intrinsic gain of Mosfets, which could be found in EE214 from stanford.

mouseyyh · 发表于 2013-7-12 10:41:26

good! thanks share!!!

qiwentuo · 发表于 2013-7-12 15:10:39

能说中文吗？哥们。

achilles01 · 发表于 2013-7-13 12:34:11

I agree with your signature

2012niuren · 发表于 2013-8-8 13:11:51

kankan

QQben · 发表于 2017-3-22 09:30:25

谢谢分享

[原创] How to choose Vds in analog design based on 2id/gm methodology

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