[EBook]Integrated Power Devices and TCAD Simulation

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Author:Yue  Fu, Zhanming  Li, Wai Tung  Ng, Johnny K.O.  Sin
January 23, 2014                                                             by CRC Press
                                                                  Reference                               - 364 Pages                                                             - 330 B/W Illustrations
                              ISBN 9781466583818 - CAT# K19007

                                                                                    Features

Uses TCAD simulation examples to explain the design of integrated power semiconductor devices
Describes the physics inside devices such as LDMOSFETs, LIGBTs, and super junction LDMOSFETs
Delivers a simple introduction to power management systems essential to power device engineers
Covers a variety of topics from power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond
Includes a virtual process flow for smart PIC technology as well as a technology development organization chart

                                                                                    Summary
From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems.
Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs).
Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.

Table of Contents
Power Electronics: The Enabling Green Technology
Introduction to Power Electronics
History of Power Electronics
DC/DC Converters
Linear Voltage Regulators
Switched Capacitor DC/DC Converters (Charge Pumps)
Switched Mode DC/DC Converters
Comparison Between Linear Regulators, Charge Pumps, and Switched Regulators
Topologies for Non-Isolated DC/DC Switched Converters
Topologies for Isolated Switching Converters
SPICE Circuit Simulation
Power Management Systems for Battery-Powered Devices
Chapter Summary
Power Converters and Power Management ICs
Dynamic Voltage Scaling for VLSI Power Management
Integrated DC-DC Converters
Chapter Summary
Semiconductor Industry and More than Moore
The Semiconductor Industry
History of Semiconductor Industry
Food Chain Pyramid of Semiconductor Industry
Semiconductor Companies
More than Moore
Smart Power IC Technology
Smart Power IC Technology Basics
Smart Power IC Technology: Historical Perspective
Smart Power IC Technology: Industrial Perspective
Smart Power IC Technology: Technological Perspective
Introduction to TCAD Process Simulation
Overview
Mesh Set Up and Initialization
Ion Implantation
Deposition
Oxidation
Etching
Diffusion
Segregation
Process Simulator Models Calibration
Introduction to 3D TCAD Process Simulation
GPU Simulation
Introduction to TCAD Device Simulation
Overview
Basics about Device Simulation
Physical Models
AC Analysis
Trap Model in TCAD Simulation
Quantum Tunneling
Device Simulator Models Calibration
Power IC Process Flow with TCAD Simulation
Overview
A Mock-Up Power IC Process Flow
Smart Power IC Process Flow Simulation
Integrated Power Semiconductor Devices with TCAD Simulation
PN Junction Diodes
Bipolar Junction Transistors (BJTs)
LDMOS
Integrated Power Semiconductor Devices with 3D TCAD Simulations
3D Device Layout Effect
3D Simulation of LIGBT
Super Junction LDMOS
Super Junction Power FINFET
Large Interconnect Simulation
GaN Devices: An Introduction
Compound Materials vs. Silicon
Substrate Materials for GaN Devices
Polarization Properties of III-Nitride Wurtzite
AlGaN/GaN Heterojunction
Traps in AlGaN/GaN Structure
A Simple AlGaN/GaN HEMT
GaN Power HEMT Example I
GaN Power HEMT Example II
Gate Leakage Simulation of GaN HEMT
Market Prospect of Compound Semiconductors for Power Applications
Appendix A
Appendix B
Appendix C
Bibliography
Index

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