请问什么是TCD cell

herrzhou

有什么作用

herrzhou

有什么作用
herrzhou 发表于 2014-5-12 10:03

                               
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    没人知道吗

icfbicfb

监控工艺的，tsmc叫加 你就加么，

xylyc521

回复 2# herrzhou

  工艺制造  要求用的        防止工艺偏差

wenfangsibao

有哪位大侠能多解释一下这种 cell 吗？没概念。

l690527

就是 FAB 定位 檢測用的
在chip 每2000um 左右 塞一個

TCD (Test-key Critical Dimension) Cell

For technology nodes below 40nm, there are few important rules that must be considered while creating the floorplan.


In fabrication of semiconductors, the minimum line width of the circuit element is called critical dimension (CD). The smaller the circuit element is, the less variation of the CD is allowed. So fabrication of these smaller elements is a big challenge due to critical dimension uniformity (CDU) which impacts the device performance and its characteristics. CDU is a major contributor to yield drop out in deep sub micron technologies Thus, many techniques for improving the critical dimension uniformity are developed,


TCD structures are placed to monitor these various processes variation on the die.




The TCD structure is required to be placed at regular intervals throughout the chip.It could be a significant size, which may need to be allocated on the die early on.
This may impact a floorplan of a block at a later stage if this fact is not considered early on, such as in a block packed with memories.

These are inserted after power planning also we can stack BEOL TCDs over FEOL TCDs to save placement area but BEOL TCDs with metal layer M cannot place over layer M routing.
If a FEOL TCD is on layer M routing, then a BEOL TCD with metal layer M cannot stack with this FEOL TCD.
TCD width and height are not even multiples of unit tile width and height. They are placed
similar to regular macros.


This is one of few of the mandatory components that must be considered in the early stages of full-chip floorplanning, and must be considered for block-level floorplanning.

l690527

FAB 良率 定位檢測用的  tsmc 叫TCD

TCD (Test-key Critical Dimension) Cell
For technology nodes below 40nm, there are few important rules that must be considered while creating the floorplan.


In fabrication of semiconductors, the minimum line width of the circuit element is called critical dimension (CD). The smaller the circuit element is, the less variation of the CD is allowed. So fabrication of these smaller elements is a big challenge due to critical dimension uniformity (CDU) which impacts the device performance and its characteristics. CDU is a major contributor to yield drop out in deep sub micron technologies Thus, many techniques for improving the critical dimension uniformity are developed,


TCD structures are placed to monitor these various processes variation on the die.




The TCD structure is required to be placed at regular intervals throughout the chip.It could be a significant size, which may need to be allocated on the die early on.
This may impact a floorplan of a block at a later stage if this fact is not considered early on, such as in a block packed with memories.

These are inserted after power planning also we can stack BEOL TCDs over FEOL TCDs to save placement area but BEOL TCDs with metal layer M cannot place over layer M routing.
If a FEOL TCD is on layer M routing, then a BEOL TCD with metal layer M cannot stack with this FEOL TCD.
TCD width and height are not even multiples of unit tile width and height. They are placed
similar to regular macros.


This is one of few of the mandatory components that must be considered in the early stages of full-chip floorplanning, and must be considered for block-level floorplanning.

l690527

                     tsmc 良率 定位 測試用的 類似每 2000um 距離內塞一個
TCD (Test-key Critical Dimension) Cell

For technology nodes below 40nm, there are few important rules that must be considered while creating the floorplan.


In fabrication of semiconductors, the minimum line width of the circuit element is called critical dimension (CD). The smaller the circuit element is, the less variation of the CD is allowed. So fabrication of these smaller elements is a big challenge due to critical dimension uniformity (CDU) which impacts the device performance and its characteristics. CDU is a major contributor to yield drop out in deep sub micron technologies Thus, many techniques for improving the critical dimension uniformity are developed,


TCD structures are placed to monitor these various processes variation on the die.




The TCD structure is required to be placed at regular intervals throughout the chip.It could be a significant size, which may need to be allocated on the die early on.
This may impact a floorplan of a block at a later stage if this fact is not considered early on, such as in a block packed with memories.

These are inserted after power planning also we can stack BEOL TCDs over FEOL TCDs to save placement area but BEOL TCDs with metal layer M cannot place over layer M routing.
If a FEOL TCD is on layer M routing, then a BEOL TCD with metal layer M cannot stack with this FEOL TCD.
TCD width and height are not even multiples of unit tile width and height. They are placed
similar to regular macros.


This is one of few of the mandatory components that must be considered in the early stages of full-chip floorplanning, and must be considered for block-level floorplanning.

mingtutu

testkey critical dimension cell,主要是DFM的考量，改善yield。

bq5410

感谢！