【2018 文字版】Characterization of Wide Bandgap Power Semiconductor Devices

hsh22 · 发表于 2018-10-3 23:11:47

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本帖最后由 hsh22 于 2018-10-3 23:14 编辑

文字版 Characterization of Wide Bandgap Power Semiconductor Devices

Characterization of Wide Bandgap Power Semiconductor Devices.part1.rar (15 MB , 下载次数: 277 )

Characterization of Wide Bandgap Power Semiconductor Devices.part2.rar (15 MB , 下载次数: 267 )

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Published by The Institution of Engineering and Technology, London, United Kingdom
The Institution of Engineering and Technology is registered as a Charity in England &
Wales (no. 211014) and Scotland (no. SC038698).
† The Institution of Engineering and Technology 2018

lhyi · 发表于 2018-10-4 01:43:15

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apteye · 发表于 2018-10-4 17:17:36

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dcircuit · 发表于 2018-10-4 17:57:37

thanks

alter_chen · 发表于 2018-10-4 19:59:16

多谢分享

xuleiwx · 发表于 2018-10-4 23:25:15

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peterlin2010 · 发表于 2018-10-5 07:19:14

文字版 Characterization of Wide Bandgap Power Semiconductor Devices

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hsh22 发表于 2018-10-3 23:11

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good

tu_yjq123 · 发表于 2018-10-7 17:49:25

多谢分享

hzz209 · 发表于 2018-10-11 10:34:29

谢谢分享

quhuaibo · 发表于 2018-10-16 07:35:19

good material

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