东南大学,CMOS 60-GHz and E-band Power Amplifiers and Transmitters

renzhixiong · 发表于 2015-12-12 00:02:05

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CMOS 60-GHz and E-band Power Amplifiers and Transmitters
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The rapid growth of mobile data and the use of smart phones are making
unprecedented challenges for wireless service providers to overcome a global
bandwidth shortage. Millimeter-wave (mm-Wave) technology is widely considered
as one of the key technologies that will continue to serve the consumer demand for
increased wireless data capacity. Meanwhile, the advanced CMOS can now well
operate in mm-Wave bands, permitting the integration of a full transceiver in a
low-cost, high-yield technology.
However, the design of a mm-Wave transceiver in advanced CMOS still poses
many challenges at device, circuit, and architecture levels. In addition to generic
difficulties, such as high-frequency operation and low active gain, mm-Wave
designers must deal with issues like low breakdown voltage, high interconnect loss,
unwanted mutual coupling, poor device matching, inaccurate PDK high-frequency
models, strict design rules, long EM-simulation time, etc. At transmitter side, all
these critical issues limit the output power and efficiency, prolong the design time,
and make it difficult to guarantee the success of tape-out.
This book focuses on the techniques to realize compact CMOS mm-Wave
transmitters (TXs) and power amplifiers (PAs) towards more output power, higher
efficiency, and broader bandwidth. To address design challenges at mm-Wave,
novel design techniques will be introduced, such as optimal transistor layout,
enhanced amplifier stage, and broadband power combiner. Design methodologies
will be presented to deal with the long EM-simulation time and strict design
rules. In addition, detailed design issues, such as common-mode stability and
magnetic mutual coupling, will also be covered in the book. All the proposed
design techniques will be applied to five prior-art designs that are implemented
and measured in the context of this work. These designs include (1) a 60-GHz
outphasing TX which is the first application of outphasing technique at mm-Wave;
(2) a 60-GHz dual-mode Class AB PA which is the first dual-mode PA presented
at 60GHz and achieves a recorded PAE of 30%; (3) an E-band direct-conversion
TX that shows measured 4.5-Gb/s 64-QAMand 14-Gb/s 16-QAM; (4) a broadband

4-way E-band PA which is the first reported silicon-based PA achieving uniform
gain, output power, and PAE across the complete E-band; and (5) a 4-way E-band
PA based on neutralized bootstrapped amplifier topology that shows the highest
reported power gain per stage.