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发表于 2014-1-18 20:39:20
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以下内容摘自1999年JSSC的paper
Toru Tanzawa received the B.E. degree in physics
from Saitama University, Japan, in 1990 and the
M.S. degree in physics from Tohoku University,
Japan, in 1992.
In 1992, he joined the Toshiba Research and
Development Center, Kanagawa, Japan. Since then,
he has been working on the circuit design of high-
density flash memories. In 1996, he transferred to
the Toshiba Microelectronics Engineering Labora-
tory, Toshiba Corp., Yokohama, Japan. He is now
working on the circuit design of low-voltage, low-
power flash memories. |
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