AdvancedPowerMOSFETConcepts

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AdvancedPowerMOSFETConcepts by B.JayantBaliga

Contents
1Introduction ...............................................................1
1.1IdealPowerSwitchingWaveforms ....................................2
1.2IdealandTypicalPowerMOSFETCharacteristics ...................3
1.3TypicalPowerMOSFETStructures ...................................5
1.4IdealDriftRegionforUnipolarPowerDevices ......................6
1.5Charge-CoupledStructures:IdealSpecificOn-Resistance ...........8
1.6RevisedBreakdownModelsforSilicon ..............................12
1.7TypicalPowerMOSFETApplications ...............................18
1.7.1DC-DCSync-BuckConverter .................................18
1.7.2Variable-FrequencyMotorDrive ..............................19
1.8Summary ..............................................................21
References.. ...............................................................21
2D-MOSFETStructure ...................................................23
2.1TheD-MOSFETStructure ...........................................23
2.2PowerD-MOSFETOn-Resistance ...................................25
2.2.1ChannelResistance ............................................28
2.2.2AccumulationResistance ......................................29
2.2.3JFETResistance ...............................................29
2.2.4DriftRegionResistance .......................................31
2.2.5N+
SubstrateResistance .......................................32
2.2.6DrainandSourceContactResistance. ........................32
2.2.7TotalOn-Resistance ...........................................33
2.3BlockingVoltage .....................................................37
2.3.1ImpactofEdgeTermination ...................................38
2.3.2ImpactofGradedDopingProfile ..............................39
2.4OutputCharacteristics ................................................44
2.4.1SimulationExample ...........................................45
2.5DeviceCapacitances ..................................................46
2.5.1SimulationExample ...........................................49

2D-MOSFETStructure ...................................................23
2.1TheD-MOSFETStructure ...........................................23
2.2PowerD-MOSFETOn-Resistance ...................................25
2.2.1ChannelResistance ............................................28
2.2.2AccumulationResistance ......................................29
2.2.3JFETResistance ...............................................29
2.2.4DriftRegionResistance .......................................31
2.2.5N+
SubstrateResistance .......................................32
2.2.6DrainandSourceContactResistance. ........................32
2.2.7TotalOn-Resistance ...........................................33
2.3BlockingVoltage .....................................................37
2.3.1ImpactofEdgeTermination ...................................38
2.3.2ImpactofGradedDopingProfile ..............................39
2.4OutputCharacteristics ................................................44
2.4.1SimulationExample ...........................................45
2.5DeviceCapacitances ..................................................46
2.5.1SimulationExample ...........................................49

2.6GateCharge ...........................................................51
2.6.1SimulationExample ...........................................52
2.7DeviceFiguresofMerit ..............................................54
2.8Discussion .............................................................56
References.. ...............................................................61
3U-MOSFETStructure ...................................................63
3.1TheU-MOSFETStructure ...........................................63
3.2PowerU-MOSFETOn-Resistance ...................................66
3.2.1ChannelResistance ............................................67
3.2.2AccumulationResistance ......................................68
3.2.3DriftRegionResistance .......................................68
3.2.4TotalOn-Resistance ...........................................69
3.3BlockingVoltage .....................................................73
3.3.1ImpactofEdgeTermination ...................................74
3.3.2ImpactofGradedDopingProfile ..............................74
3.4OutputCharacteristics ................................................80
3.4.1SimulationExample ...........................................80
3.5DeviceCapacitances ..................................................81
3.5.1SimulationExample ...........................................84
3.6GateCharge ...........................................................86
3.6.1SimulationExample ...........................................88
3.7DeviceFiguresofMerit ..............................................90
3.8ThickTrenchBottomOxideStructure ...............................92
3.8.1On-Resistance ..................................................92
3.8.2ReverseTransferCapacitance .................................92
3.8.3GateCharge ....................................................94
3.8.4DeviceFigures-of-Merit .......................................95
3.9HighVoltageDevices ..............................................101
3.9.1SimulationResults ............................................101
3.10InductiveLoadTurn-OffCharacteristics... ......................106
3.10.1SimulationResults .........................................111
3.11Discussion .........................................................112
References.. ..............................................................117

4SC-MOSFETStructure ................................................119
4.1TheSC-MOSFETStructure ........................................120
4.2PowerSC-MOSFETOn-Resistance ................................122
4.2.1ChannelResistance ...........................................124
4.2.2AccumulationResistance .....................................124
4.2.3JFETResistance ..............................................125
4.2.4DriftRegionResistance ......................................126
4.2.5TotalOn-Resistance ..........................................127

4.3BlockingVoltage ...................................................133
4.3.1ImpactofEdgeTermination ..................................133
4.4OutputCharacteristics ..............................................138
4.4.1SimulationExample ..........................................139
4.5DeviceCapacitances ................................................139
4.5.1SimulationExample ..........................................144
4.6GateCharge .........................................................147
4.6.1SimulationExample ..........................................149
4.7DeviceFiguresofMerit ............................................151
4.8Discussion ...........................................................153
References.. ..............................................................158
5CC-MOSFETStructure ................................................159
5.1TheCC-MOSFETStructure ........................................160
5.2Charge-CouplingPhysicsandBlockingVoltage ..................162
5.2.1SimulationResults ............................................173
5.3PowerCC-MOSFETOn-Resistance ...............................186
5.3.1ChannelResistance ...........................................187
5.3.2AccumulationResistanceforCurrentSpreadingRegion ....188
5.3.3DriftRegionResistance ......................................189
5.3.4TotalOn-Resistance ..........................................190
5.4OutputCharacteristics ..............................................195
5.4.1SimulationExample ..........................................195
5.5DeviceCapacitances ................................................196
5.5.1SimulationExample ..........................................206
5.6GateCharge .........................................................209
5.6.1SimulationExample ..........................................214
5.7DeviceFiguresofMerit ............................................217
5.8EdgeTermination ...................................................220
5.8.1SimulationExample ..........................................222
5.9HighVoltageDevices ..............................................224
5.9.1SimulationResults ............................................224
5.10ProcessSensitivityAnalysis ......................................232
5.11Discussion .........................................................235
References.. ..............................................................239

6GD-MOSFETStructure ................................................241
6.1TheGD-MOSFETStructure ........................................242
6.2Charge-CouplingPhysicsandBlockingVoltage ..................244
6.2.1SimulationResults ............................................250
6.3PowerGD-MOSFETOn-Resistance ...............................263
6.3.1ChannelResistance ...........................................265
6.3.2AccumulationResistanceforCurrentSpreadingRegion ....266

6.3.3DriftRegionResistance ......................................266
6.3.4TotalOn-Resistance ..........................................268
6.4OutputCharacteristics ..............................................271
6.4.1SimulationExample ..........................................272
6.5DeviceCapacitances ................................................273
6.5.1SimulationExample ..........................................276
6.6GateCharge .........................................................278
6.6.1SimulationExample ..........................................280
6.7DeviceFiguresofMerit ............................................283
6.8EdgeTermination ...................................................285
6.9HighVoltageDevices ..............................................285
6.9.1SimulationResults ............................................286
6.10ProcessSensitivityAnalysis ......................................306
6.11InductiveLoadTurn-OffCharacteristics... ......................310
6.11.1SimulationResults .........................................315
6.12Discussion .........................................................317
References.. ..............................................................322
7SJ-MOSFETStructure .................................................323
7.1TheSJ–MOSFETStructure ........................................324
7.2Charge–CouplingPhysics ..........................................326
7.2.1SimulationResults ............................................329
7.3PowerSJ-MOSFETOn-Resistance ................................346
7.3.1ChannelResistance ...........................................350
7.3.2AccumulationResistanceforCurrentSpreadingRegion ....351
7.3.3DriftRegionResistance ......................................351
7.3.4TotalOn-Resistance ..........................................353
7.4OutputCharacteristics ..............................................357
7.4.1SimulationExample ..........................................357
7.5DeviceCapacitances ................................................357
7.5.1SimulationExample ..........................................364
7.6GateCharge .........................................................367
7.6.1SimulationExample ..........................................369
7.7DeviceFiguresofMerit ............................................371
7.8EdgeTermination ...................................................373
7.8.1SimulationExample ..........................................374
7.9HighVoltageDevices ..............................................378
7.9.1SimulationResults ............................................378
7.10ProcessSensitivityAnalysis ......................................381

7.11InductiveLoadTurn-OffCharacteristics... ......................385
7.11.1SimulationResults .........................................389
7.12Discussion .........................................................391
References.. ..............................................................396

8IntegralDiode ...........................................................399
8.1PowerMOSFETBodyDiode ......................................400
8.2ComputerPowerSupplies ..........................................400
8.2.1PowerU–MOSFETStructure ................................402
8.2.2PowerCC–MOSFETStructure ...............................407
8.2.3PowerJBSFETStructure .....................................412
8.3MotorControlApplication .........................................424
8.3.1PowerU–MOSFETStructure ................................425
8.3.2PowerJBSFETStructure .....................................430
8.3.3PowerGD–MOSFETStructure ..............................437
8.3.4PowerGD–JBSFETStructure ................................443
8.3.5PowerSJ–MOSFETStructure ................................461
8.3.6PowerSJ–JBSFETStructure .................................467
8.4Discussion ...........................................................472
8.4.1Low–VoltageDevices ........................................473
8.4.2High–VoltageDevices ........................................474
References.. ..............................................................476
9SiCPlanarMOSFETStructures ......................................477
9.1ShieldedPlanarInversion-ModeMOSFETStructure ..............478
9.1.1BlockingMode ...............................................479
9.1.2ThresholdVoltage ............................................484
9.1.3On–StateResistance ..........................................486
9.1.4Capacitances ..................................................493
9.1.5GateCharge ...................................................496
9.1.6DeviceFiguresofMerit ......................................498
9.1.7InductiveLoadTurn-OffCharacteristics .....................499
9.1.8Body-DiodeCharacteristics ..................................503
9.2ShieldedPlanarACCUFETStructure ..............................504
9.2.1BlockingMode ...............................................505
9.2.2ThresholdVoltage ............................................510
9.2.3On–StateResistance ..........................................512
9.2.4Capacitances ..................................................517
9.2.5GateCharge ...................................................519
9.2.6DeviceFiguresofMerit ......................................522
9.2.7InductiveLoadTurn-OffCharacteristics .....................523
9.2.8Body–DiodeCharacteristics ..................................527
9.3Discussion ...........................................................531
References.. ..............................................................533

10Synopsis ..................................................................535
10.1ComputerPowerSupplies .........................................536
10.1.1InadvertentTurn–OnSuppression.. ......................537
10.1.2DeviceActiveArea .......................................539

10.1.3SwitchingPowerLosses ...................................540
10.1.4InputCapacitance .........................................540
10.1.5DeviceComparison ........................................540
10.2HighVoltageMotorControl ......................................543
10.3DeviceComparison ................................................549
10.4Summary ...........................................................552
References.. ..............................................................552
AbouttheAuthor ............................................................553
Index ..........................................................................557

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