Flicker Noise in CMOS Transistors ......(by Abidi)

semico_ljj

Flicker Noise in CMOS Transistors from Subthreshold to Strong Inversion at Various Temperatures

Jimmin Chang, Member, IEEE, A. A. Abidi, Member, IEEE, and C. R. Viswanathan, Fellow, IEEE

Abstract
    Flicker noise is the dominant noise source in silicon
MOSFET’S. Even though considerable amount of work has been
done in investigating the noise mechanism, controversy still exists
as to the noise origin. In this paper, a systematic study of flicker
noise in CMOS transistors from twelve different fabricators is
reported under various bias conditions corresponding to the gate
voltage changing from subthreshold to strong inversion, and
the drain voltage changing from linear to saturation regions
of operation. The measurement temperature was varied from
room temperature down to 5 K. Experimental results consistently
suggest that 1/f noise in n-channel devices is dominated by
carrier-density fluctuation while in p-channel devices the noise
is mainly due to mobility fluctuation.

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