Stanford -EE313 Digital MOS Integrated Circuits讲义

xyj107 · 发表于 2008-10-14 08:22:12

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Stanford大学2008课程讲义[size=-0]Course Description
EE313 Digital MOS Integrated Circuits;
[size=-1]Analysis and designof digital integrated circuits in CMOS technology. Development ofdifferent models for MOS transistors and how to use them to analyzecircuit performance. Use of computer-aided circuit analysis. Logicfamilies and "styles" including fully complementary static logic,dynamic, pass-transistor, and pulse mode logic. Topics include sizingfor minimum delay, noise and noise margin, power dissipation. Memorydesign (SRAM) as a motivating example.

Lecture 1 - Intro and Modeling

Lecture 2 - RC Modeling and Calibration

Lecture 3 Memory Design

Lecture 4 - Delay Optimization and Logical Effort

Lecture 5 - Decoder Optimization

Lecture 6 LE in the Real World

Lecture 7 Lower LE Gates

Lecture 8 - Low Field MOS Transistor Model

Lecture 9 - High Field MOS Transistor Model

Lect 10 - Using MOS Models

Lect 11 - Cap Models

Lect 12 SRAM Column Circuits

Lect 13 What Makes Gates Digital

Lect 14 Diff Pairs - Current Steering Logic

Lect 15 - Static Sense Amplifiers

Lect 16 MOS Matching Clk SenseAmps

Lect 17 SRAM Noise Margins / Noise

Lect 18 - Timing Gen and Array Partitioning

Lect 19 Adv Clocked Logic

Lect 20 Low Swing SRAM

Lect 21 - Introduction to Solid State

Lect 22 Threshold Voltage, Leakage and Tunneling

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