sentaurus例子中的GaN_Processing如何才能得到正确的输出信号？

565017198

本人刚接触sentaurus，在用例子中的GaN_Processing模型时，输入正弦信号却得不到正确的输出，sdevice的代码如下
Device MOS{
Electrode {
        { Name="gate"   Voltage= 0 Schottky Workfunction= 5.0 }
        { Name="drain"  Voltage= 0 Schottky Workfunction= 4.3 }
        { Name="source" Voltage= 0 Schottky Workfunction= 4.3}
}

Thermode {
        { Name="thermal" Temperature= 300 SurfaceResistance= 0.002 }
        { Name="gate"    Temperature= 300 SurfaceResistance= 2 }
        { Name="drain"   Temperature= 300 SurfaceResistance= 2 }
        { Name="source"  Temperature= 300 SurfaceResistance= 2 }
}

File {
        Grid= "@tdr@"
        Parameter= "@parameter@"
        Piezo= "@tdr@"
        Current= "@plot@"
        Plot= "@tdrdat@"
}

Physics {
    DefaultParametersFromFile
    AreaFactor=1000
    EffectiveIntrinsicDensity (Nobandgapnarrowing)
    Fermi
    Thermionic
    Recombination (SRH)
    Aniso(poisson direction=(0 0 1))

    eBarrierTunneling "GateNLM"
    eBarrierTunneling "SourceNLM"
    eBarrierTunneling "DrainNLM"

    Mobility (DopingDependence Highfieldsaturation)
    Piezoelectric_Polarization (stress)
    Traps((Acceptor Level Conc= 5e16 EnergyMid= 0.45 FromMidBandGap))
}

Physics (MaterialInterface="AlGaN/Nitride") {
    PiezoElectric_Polarization(activation= 0)
    Traps((Donor Level Conc= 5e13 EnergyMid= 1.0 FromMidBandGap))
}

Physics (RegionInterface="channel/barrier") {
    PiezoElectric_Polarization(activation= 1.0)
}

#if @xbuffer@ == 0
Physics (RegionInterface="channel/seed") {
     PiezoElectric_Polarization(activation= 0)
}
#else
Physics (RegionInterface="channel/buffer") {
    PiezoElectric_Polarization(activation= 1.0)
}

Physics (RegionInterface="buffer/seed") {
    PiezoElectric_Polarization(activation= 0)
}
#endif

Physics (MaterialInterface="AlN/Oxide") {
    PiezoElectric_Polarization(activation= 0)
}

Physics (MaterialInterface="AlGaN/Oxide") {
    PiezoElectric_Polarization(activation= 0)
}

Math {
    NonLocal "GateNLM"   (Electrode="gate"
                          Digits= 4
                          Length= 12e-7
                          EnergyResolution= 1e-3)
    NonLocal "SourceNLM" (Electrode="source"
                          Digits= 4
                          Length= 12e-7
                          EnergyResolution= 1e-3)
    NonLocal "DrainNLM"  (Electrode="drain"
                          Digits= 4
                          Length= 12e-7
                          EnergyResolution= 1e-3)
}
}

Plot {
    NonLocal
    Electricfield/Vector
    eCurrent/Vector hCurrent/Vector TotalCurrent/Vector

    SRH
    eMobility hMobility
    eQuasiFermiEnergy hQuasiFermiEnergy
    eGradQuasiFermi/Vector hGradQuasiFermi/Vector
    eEparallel hEparallel
    eVelocity/Vector hVelocity/Vector

    Doping DonorConcentration Acceptorconcentration
    SpaceCharge
    ConductionBand ValenceBand
    BandGap Affinity
    xMoleFraction

    PE_Polarization/Vector
    PE_Charge PiezoCharge
    eTrappedCharge eInterfaceTrappedCharge
    hTrappedCharge hInterfaceTrappedCharge
    ConversePiezoelectricField/Tensor

    eBarrierTunneling hBarrierTunneling
    OpticalGeneration

    StressXX StressXY StressYY StressYZ StressZZ StressXZ

    LatticeTemperature eTemperature hTemperature

    eAvalanche hAvalanche
}

Math {
    Number_of_threads = 4
    ConstRefPot= 4.6
    Method= ILS(set= 12)
    ILSrc= "
      set (12) {
      // User-defined set that has worked well for GaN simulations
      iterative(gmres(100), tolrel=1e-9, tolunprec=1e-4, tolabs=0, maxit=200);
      preconditioning(ilut(1e-8,-1), left);
      ordering(symmetric=nd, nonsymmetric=mpsilst);
      options(compact=yes, linscale=0, refineresidual=10, verbose=0);
    };"   
    Transient= BE
    ExitOnFailure
    Extrapolate
    Iterations= 20
    DirectCurrentComputation
    ErrRef(Electron)=1e8
    ErrRef(Hole)=1e8
    ExtendedPrecision(128)
    Digits= 8
    * RefDens_eGradQuasiFermi_EparallelToInterface= 1e8
    * RefDens_hGradQuasiFermi_EparallelToInterface= 1e8
    AnisoSG
}

System {
  MOS gan ( "source"=0  "drain"=out "gate"=in)

  Vsource_pset vgg (in 0) {sine =(0 1 1k 0 0)}
  Vsource_pset vdd (1 0) {dc=10}
  Resistor_pset r (1 out) {resistance = 1k}

  Plot "n@node@_sine" (time() v(in) v(out) i(gan,in) i(gan,out))
}

Solve {
      Coupled (Iterations= 100 linesearchdamping= 1e-5) {Poisson}
      Coupled (Iterations= 100 linesearchdamping= 1e-5) {Poisson Electron}
      Coupled (Iterations= 100 linesearchdamping= 1e-5) {Poisson Electron Circuit}
      Transient (
      InitialTime= 0 FinalTime= 2e-3
      InitialStep= 1e-8  MaxStep= 1e-4
   ){ Coupled { Poisson Electron Hole Temperature Circuit }
   }
}

得到的输出是这样的，只有一点点的起伏，不知道是什么原因，希望有大佬帮忙解答！（附上器件的IdVg和IdVd图）

lv6336

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565017198

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