CMOS反相器（Silvaco）

czym520

网上一直找不到CMOS反相器的Silvaco程序，自己编了个。望大家相互探讨，相互学习。看看我这程序哪有不对

1. go athena
   
2. #
   
3. line x loc=0.0 spac=0.1
   
4. line x loc=0.3 spac=0.002
   
5. line x loc=0.5 spac=0.002
   
6. line x loc=0.8 spac=0.002
   
7. line x loc=1.0 spac=0.01
   
8. 
   
9. line y loc=0.0 spac=0.002
   
10. line y loc=0.2 spac=0.002
    
11. line y loc=0.5 spac=0.01
    
12. line y loc=0.8 spac=0.15
    
13. 
    
14. init orientation=100  c.boron=1e14 space.mul=3
    
15. 
    
16. diffus time=30 temp=1000 dryo2 press=1.00 hcl=3
    
17. 
    
18. etch oxide thick=0.02
    
19. 
    
20. implant phos dose=8e12 energy=100 pears
    
21. 
    
22. diffus time=100 temp=950 weto2 hcl=3
    
23. 
    
24. diffus time=50 temp=1000 t.rate=4.00 dryo2 press=0.1 hcl=3
    
25. diffus time=220  temp=1200  nitro press=1
    
26. diffus time=90  temp=1200 t.rate=-4.444 nitro press=1
    
27. 
    
28. etch oxide all
    
29. diffus time=20 temp=1000 dryo2 press=1 hcl=3
    
30. etch oxide all
    
31. diffus time=11 temp=925 dryo2 press=1 hcl=3
    
32. depo oxide thick=0.2 divisions=8
    
33. 
    
34. etch oxide left p1.x=0.5
    
35. 
    
36. implant phos dose=9.5e11 energy=10 pearson
    
37. 
    
38. etch oxide all
    
39. 
    
40. depo oxide thick=0.41 divisions=8
    
41. etch oxide right p1.x=0.5
    
42. implant boron dose=8e12 energy=10 pears
    
43. #diffus temp=1000 time=30 dryo2 press=1 hcl=3
    
44. etch oxide all
    
45. 
    
46. #form the pwell
    
47. depo oxide thick=0.4 divisions=8
    
48. etch oxide right p1.x=0.5
    
49. implant boron dose=5e10 energy=11 pearson
    
50. etch oxide all
    
51. depo oxide thick=0.015 divisions=8
    
52. 
    
53. #form poly
    
54. depo poly thick=0.2 divisions=10
    
55. etch poly left p1.x=0.28
    
56. 
    
57. etch poly start x=0.35 y=0
    
58. etch continue x=0.35 y=0.22
    
59. etch continue x=0.65 y=0.22
    
60. etch done x=0.65 y=0
    
61. 
    
62. etch poly right p1.x=0.72
    
63. 
    
64. #form Nmos's source and drain
    
65. depo oxide thick=0.05 divisions=8
    
66. etch oxide start x=0.5 y=-0.1
    
67. etch continue x=0.5 y=0
    
68. etch continue x=0.8 y=0
    
69. etch done x=0.8 y=-0.1
    
70. 
    
71. etch oxide start x=0.6 y=0
    
72. etch continue x=0.6 y=0.21
    
73. etch continue x=0.65 y=0.21
    
74. etch done x=0.65 y=0
    
75. 
    
76. etch oxide start x=0.72 y=0
    
77. etch continue x=0.72 y=0.21
    
78. etch continue x=0.77 y=0.21
    
79. etch done x=0.77 y=0
    
80. 
    
81. method fermi compress
    
82. diffuse time=3 temp=900 weto2 press=1.0
    
83. implant phos dose=3.0e13 energy=10 pearson
    
84. implant phos dose=3.0e13 energy=10 tilt=-7 pearson
    
85. 
    
86. #etch oxide except gate
    
87. 
    
88. etch oxide start x=0.2 y=-0.1
    
89. etch continue x=0.2 y=0
    
90. etch continue x=0.5 y=0
    
91. etch done x=0.5 y=-0.1
    
92. 
    
93. etch oxide start x=0 y=0
    
94. etch continue x=0 y=0.2
    
95. etch continue x=0.28 y=0.2
    
96. etch done x=0.28 y=0
    
97. 
    
98. etch oxide start x=0.35 y=0
    
99. etch continue x=0.35 y=0.2
    
100. etch continue x=0.6 y=0.2
     
101. etch done x=0.6 y=0
     
102. 
     
103. etch oxide start x=0.77 y=0
     
104. etch continue x=0.77 y=0.2
     
105. etch continue x=1.0 y=0.2
     
106. etch done x=1.0 y=0
     
107. 
     
108. #form the Pmos's source and drain
     
109. depo oxide thick=0.05 divisions=8
     
110. etch oxide start x=0.15 y=-0.1
     
111. etch continue x=0.15 y=0
     
112. etch continue x=0.45 y=0
     
113. etch done x=0.45 y=-0.1
     
114. 
     
115. etch oxide start x=0.23 y=0
     
116. etch continue x=0.23 y=0.21
     
117. etch continue x=0.28 y=0.21
     
118. etch done x=0.28 y=0
     
119. 
     
120. etch oxide start x=0.35 y=0
     
121. etch continue x=0.35 y=0.21
     
122. etch continue x=0.4 y=0.21
     
123. etch done x=0.4 y=0
     
124. 
     
125. method fermi compress
     
126. diffuse time=3 temp=900 weto2 press=1.0
     
127. implant boron dose=6.0e12 energy=6 pearson
     
128. implant boron dose=6.0e12 energy=6 tilt=-7 pearson
     
129. 
     
130. #etch all oxide except gate
     
131. etch oxide start x=0.55 y=-0.1
     
132. etch continue x=0.55 y=0
     
133. etch continue x=0.85 y=0
     
134. etch done x=0.85 y=-0.1
     
135. 
     
136. etch oxide start x=0 y=0
     
137. etch continue x=0 y=0.2
     
138. etch continue x=0.23 y=0.2
     
139. etch done x=0.23 y=0
     
140. 
     
141. etch oxide start x=0.36 y=0
     
142. etch continue x=0.36 y=0.2
     
143. etch continue x=0.64 y=0.2
     
144. etch done x=0.64 y=0
     
145. 
     
146. etch oxide start x=0.73 y=0
     
147. etch continue x=0.73 y=0.2
     
148. etch continue x=1.0 y=0.2
     
149. etch done x=1.0 y=0
     
150. 
     
151. 
     
152. #p xing source and drain  substrate implant
     
153. depo oxide thick=0.1 divisions=8
     
154. 
     
155. etch oxide start x=0.21 y=-0.1
     
156. etch continue x=0.21 y=0.215
     
157. etch continue x=0.26 y=0.215
     
158. etch done x=0.26 y=-0.1
     
159. 
     
160. etch oxide start x=0.37 y=-0.1
     
161. etch continue x=0.37 y=0.215
     
162. etch continue x=0.42 y=0.215
     
163. etch done x=0.42 y=-0.1
     
164. 
     
165. etch oxide start x=0.86 y=-0.1
     
166. etch continue x=0.86 y=0.215
     
167. etch continue x=0.93 y=0.215
     
168. etch done x=0.93 y=-0.1
     
169. 
     
170. implant boron dose=9.0e12 energy=5 tilt=0 pearson
     
171. method fermi
     
172. 
     
173. 
     
174. #etch oxide except gate
     
175. 
     
176. etch oxide start x=0.159 y=-0.12
     
177. etch continue x=0.159 y=0
     
178. etch continue x=0.9 y=0
     
179. etch done x=0.9 y=-0.12
     
180. 
     
181. etch oxide start x=0 y=0
     
182. etch continue x=0 y=0.2
     
183. etch continue x=0.27 y=0.2
     
184. etch done x=0.27 y=0
     
185. 
     
186. etch oxide start x=0.36 y=0
     
187. etch continue x=0.36 y=0.2
     
188. etch continue x=0.64 y=0.2
     
189. etch done x=0.64 y=0
     
190. 
     
191. etch oxide start x=0.73 y=0
     
192. etch continue x=0.73 y=0.2
     
193. etch continue x=1.0 y=0.2
     
194. etch done x=1.0 y=0
     
195. 
     
196. #n xing source and drain  substrate implant
     
197. depo oxide thick=0.1 divisions=8
     
198. 
     
199. etch oxide start x=0.58 y=-0.1
     
200. etch continue x=0.58 y=0.215
     
201. etch continue x=0.63 y=0.215
     
202. etch done x=0.63 y=-0.1
     
203. 
     
204. etch oxide start x=0.74 y=-0.1
     
205. etch continue x=0.74 y=0.215
     
206. etch continue x=0.79 y=0.215
     
207. etch done x=0.79 y=-0.1
     
208. 
     
209. etch oxide start x=0.07 y=-0.1
     
210. etch continue x=0.07 y=0.215
     
211. etch continue x=0.14 y=0.215
     
212. etch done x=0.14 y=-0.1
     
213. 
     
214. implant phos dose=9.0e13 energy=10 tilt=0 pears
     
215. method fermi
     
216. 
     
217. 
     
218. #etch oxide all
     
219. etch oxide start x=0.1 y=-0.1
     
220. etch continue x=0.1 y=0
     
221. etch continue x=0.9 y=0
     
222. etch done x=0.9 y=-0.1
     
223. 
     
224. etch oxide start x=0 y=-0.1
     
225. etch continue x=0 y=0.215
     
226. etch continue x=0.27 y=0.215
     
227. etch done x=0.27 y=-0.1
     
228. 
     
229. etch oxide start x=0.36 y=-0.1
     
230. etch continue x=0.36 y=0.215
     
231. etch continue x=0.64 y=0.215
     
232. etch done x=0.64 y=-0.1
     
233. 
     
234. etch oxide start x=0.73 y=-0.1
     
235. etch continue x=0.73 y=0.215
     
236. etch continue x=1 y=0.215
     
237. etch done x=1 y=-0.1
     
238. 
     
239. #depo aluminum
     
240. 
     
241. etch oxide start x=0.1 y=-0.1
     
242. etch continue x=0.1 y=0.228
     
243. etch continue x=0.12 y=0.228
     
244. etch done x=0.12 y=-0.1
     
245. 
     
246. etch oxide start x=0.21 y=-0.1
     
247. etch continue x=0.21 y=0.228
     
248. etch continue x=0.23 y=0.228
     
249. etch done x=0.23 y=-0.1
     
250. 
     
251. etch oxide start x=0.4 y=-0.1
     
252. etch continue x=0.4 y=0.228
     
253. etch continue x=0.42 y=0.228
     
254. etch done x=0.42 y=-0.1
     
255. 
     
256. etch oxide start x=0.58 y=-0.1
     
257. etch continue x=0.58 y=0.228
     
258. etch continue x=0.6 y=0.228
     
259. etch done x=0.6 y=-0.1
     
260. 
     
261. etch oxide start x=0.77 y=-0.1
     
262. etch continue x=0.77 y=0.228
     
263. etch continue x=0.79 y=0.228
     
264. etch done x=0.79 y=-0.1
     
265. 
     
266. etch oxide start x=0.88 y=-0.1
     
267. etch continue x=0.88 y=0.228
     
268. etch continue x=0.9 y=0.228
     
269. etch done x=0.9 y=-0.1
     
270. 
     
271. depo aluminum thick=0.02 divisions=2
     
272. etch aluminum left p1.x=0.1
     
273. etch aluminum right p1.x=0.9
     
274. 
     
275. etch aluminum start  x=0.23 y=-0.1
     
276. etch continue x=0.23 y=0.228
     
277. etch continue x=0.4 y=0.228
     
278. etch done x=0.4 y=-0.1
     
279. 
     
280. etch aluminum start  x=0.6 y=-0.1
     
281. etch continue x=0.6 y=0.228
     
282. etch continue x=0.77 y=0.228
     
283. etch done x=0.77 y=-0.1
     
284. 
     
285. etch aluminum start  x=0.12 y=-0.1
     
286. etch continue x=0.12 y=0.228
     
287. etch continue x=0.21 y=0.228
     
288. etch done x=0.21 y=-0.1
     
289. 
     
290. etch aluminum start  x=0.42 y=-0.1
     
291. etch continue x=0.42 y=0.228
     
292. etch continue x=0.58 y=0.228
     
293. etch done x=0.58 y=-0.1
     
294. 
     
295. etch aluminum start  x=0.79 y=-0.1
     
296. etch continue x=0.79 y=0.228
     
297. etch continue x=0.88 y=0.228
     
298. etch done x=0.88 y=-0.1
     
299. 
     
300. electrode name=dd x=0.11
     
301. electrode name=dd x=0.22
     
302. electrode name=ss x=0.78
     
303. electrode name=ss x=0.89
     
304. electrode name=in1 x=0.32
     
305. electrode name=in2 x=0.69
     
306. electrode name=out x=0.41
     
307. electrode name=out x=0.59
     
308. 
     
309. struc outfile=mos.str
     
310. tonyplot mos.str
     
311. 
     

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